Datasheet > GE60L02

GE60L02

更新时间： 2024-09-30 03:39:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	253K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GE60L02 数据手册

Pb Free Plating Product

ISSUED DATE :2005/03/01

REVISED DATE :2005/12/12B

GTM

CORPORATION

BVDSS

DS(ON)

25V

13mꢀ

50A

GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE60L02 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The through-hole version (TO-220) is available for low-profile applications and suited for low voltage

applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Low Gate Charge

*Fast Switching

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

180

62.5

0.5

Total Power Dissipation

W/к

Linear Derating Factor

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

2.0

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

GE60L02

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