Datasheet > GD3NB60HD

GD3NB60HD

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
10页	505K
描述
N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT

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GD3NB60HD 数据手册

STGD3NB60HD

N-CHANNEL 6A - 600V - DPAK

PowerMESH™ IGBT

TYPE

CES

CE(sat) (Max)

@25°C

@100°C

STGD3NB60HD

600 V

< 2.8 V

6 A

■

HIGH INPUT IMPEDANCE

OFF LOSSES INCLUDE TAIL CURRENT

LOW GATE CHARGE

HIGH FREQUENCY OPERATION

TYPICAL SHORT CIRCUIT WITHSTAND TIME

5micro S-family, 4 micro H family

CO-PACKAGED WITH TURBOSWITCH™

ANTIPARALLEL DIODE

DPAK

■

INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has de-

signed an advanced family of IGBTs, the Power-

MESH™ IGBTs, with outstanding perfomances.

The suffix "H" identifies a family optimized for high

frequency applications (up to 50kHz)in order to

achieve very high switching performances (reduced

tfall) mantaining a low voltage drop.

APPLICATIONS

■

HIGH FREQUENCY MOTOR CONTROLS

SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■

ORDERING INFORMATION

SALES TYPE

MARKING

PACKAGE

PACKAGING

STGD3NB60HDT4

GD3NB60HD

DPAK

TAPE & REEL

September 2003

1/10

12 3 4 5 6 7...10

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