Datasheet > GD3600SGT170C4S

GD3600SGT170C4S

更新时间： 2024-04-09 19:00:40

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
9页	259K
描述
C4.0.Single

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GD3600SGT170C4S 数据手册

GD3600SGT170C4S

IGBT Module

Absolute Maximum Ratings T_C=25℃ unless otherwise noted

Symbol

V_CES

V_GES

Description

Collector-Emitter Voltage

GD3600SGT170C4S Units

1700

±20

Gate-Emitter Voltage

5200

Collector Current @ T_C=25℃

@ T_C=80℃

I_C

3600

I_CM(1)

I_F

Pulsed Collector Current t_p= 1ms

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum power Dissipation @ T_j=175℃

Maximum Junction Temperature

Storage Temperature Range

Isolation Voltage RMS,f=50Hz,t=1min

Signal Terminal Screw:M4

7200

3600

I_FM

P_D

7200

19.7

℃

T_j

175

T_STG

V_ISO

-40 to +125

2500

1.8 to 2.1

8.0 to 10

4.25 to 5.75

Mounting

Torque

Power Terminal Screw:M8

N.m

Mounting Screw:M6

Notes:

(1) Repetitive rating: Pulse width limited by max. junction temperature

Electrical Characteristics of IGBT ^T_C^{=25℃ unless otherwise noted}

Off Characteristics

Symbol

Parameter

Collector-Emitter

Breakdown Voltage

Test Conditions

Min. Typ. Max. Units

V_(BR)CES

T_j=25℃

1700

V_CE=V_CES,V_GE=0V,

T_j=25℃

I_CES

I_GES

Collector Cut-Off Current

5.0

Gate-Emitter Leakage

Current

V_GE=V_GES,V_CE=0V,

T_j=25℃

400

On Characteristics

Symbol

Parameter

Test Conditions

I_C=145mA,V_CE=V_GE,

T_j=25℃

Min. Typ. Max. Units

Gate-Emitter Threshold

Voltage

V_GE(th)

5.2

5.8

6.4

I_C=3600A,V_GE=15V,

T_j=25℃

2.00

2.40

2.45

2.85

Collector to Emitter

Saturation Voltage

V_CE(sat)

I_C=3600A,V_GE=15V,

T_j=125℃

2/15/2011

2/9

Preliminary

123 4 5 6 7...9

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