Datasheet > GC9986-129C-8JB

GC9986-129C-8JB

更新时间： 2025-07-26 20:59:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	158K
描述
Mixer Diode, High Barrier, C Band, Silicon, ROHS COMPLIANT, CASE 129C, 4 PIN

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GC9986-129C-8JB 技术参数

生命周期：	Active	包装说明：	S-CQMW-F4
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.60
风险等级：	5.69	其他特性：	LOW NOISE
配置：	COMPLEX	最大二极管电容：	0.15 pF
二极管元件材料：	SILICON	二极管类型：	MIXER DIODE
频带：	C BAND	JESD-30 代码：	S-CQMW-F4
JESD-609代码：	e4	元件数量：	8
端子数量：	4	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	SQUARE	封装形式：	MICROWAVE
表面贴装：	YES	技术：	SCHOTTKY
端子面层：	GOLD	端子形式：	FLAT
端子位置：	QUAD	肖特基势垒类型：	HIGH BARRIER
Base Number Matches：	1

GC9986-129C-8JB 数据手册

GC9981 – GC9989

Schottky Barrier Diodes

Ultra High Drive Monolithic

RoHS Compliant

DESCRIPTION

KEY FEATURES

Microsemi’s Schottky Barrier devices are currently available in the eight

junction ring quad configuration. Devices are available in monolithic form for

hybrid applications as well as in hermetic or non-hermetic packages.

Monolithic devices are recommended for highest frequency, broadband

designs. The beamlead design eliminates the problems associated with wire

bonding very small junction devices thus improving reliability and

performance in MIC applications. Our in house epitaxy process capability

insures repeatability for lowest conversion loss through Ku Band. A broad

range of unique metallization schemes produce Microsemi’s complete line of

barrier heights. Diodes are available with barrier heights ranging from 600 mV

to 1300 mV per leg. By optimizing epitaxy and metallization, these devices

achieve lowest Rs-Cj products resulting in exceptional conversion loss

performance. “High Rel” screening is available on packaged devices per your

requirements.

. Monolithic Design for Lowest

Parasitics and Matched Junction

Characteristics

. Low Noise Figure

. Suitable for Applications to 26.5

GHz

. Excellent Conversion Loss

. Available High and Ultra-High

Barrier Heights

. Can be Supplied as Monolithic

Devices for Hybrid Applications or

as Packaged Devices

This series of devices meets RoHS requirements per EU Directive

2002/95/EC.

. RoHS Compliant¹

APPLICATIONS

¹These devices are supplied with Gold

plated terminations. Consult factory for

details.

Schottky Barrier diodes are suitable for a variety of circuit applications

ranging from double balanced RF mixers to high speed switching and

modulation. The monolithic beamlead design minimizes parasitic inductance

and capacitance insuring repeatable performance through Ka band. With

junction capacitances as low as 0.06 pF. Monolithic 8 junction quads are

ideally suited for broad band high drive mixers through 26.5 GHz.

APPLICATIONS/BENEFITS

. RF Mixers

Ultra-High barrier diodes, (GC9980 Series) are designed for applications

where high drive levels are available, such as, Doppler mixers or motion

detection. Microsemi also has Schottky diodes available in Ultra-Low,

Medium and High Drive levels to fit virtually any circuit requirement.

. Double Balanced Mixers

. High Speed Switching

. Motion Detection

. Phase Detectors

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Maximum Power Handling

Storage Temperature

100

ºC

T_STG

-65 to +175

Operating Temperature

T_OP

-65 to +150

ºC

IMPORTANT:

For the most current data, consult our web site: www.microsemi.com

Specifications are subject to change, consult the factory for further information.

These devices are ESD sensitive and must be handled use using ESD precautions.

Microsemi

Page 1

Rev: 2009-01-19

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

中文翻译

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与GC9986-129C-8JB相关器件

型号	品牌	获取价格	描述	数据表
GC9986-129C-8JR	MICROSEMI	获取价格	Mixer Diode, High Barrier, C Band, Silicon, ROHS COMPLIANT, CASE 129C, 4 PIN
GC9986-174C	MICROSEMI	获取价格	Bridge Rectifier Diode, Schottky, 5V V(RRM),
GC9986-174C-8JB	MICROSEMI	获取价格	Mixer Diode, High Barrier, C Band, Silicon, ROHS COMPLIANT, CASE 174C, 4 PIN
GC9986-174C-8JR	MICROSEMI	获取价格	Mixer Diode, High Barrier, C Band, Silicon, ROHS COMPLIANT, CASE 174C, 4 PIN
GC9986-8JB	MICROSEMI	获取价格	Mixer Diode, High Barrier, C Band, Silicon, ROHS COMPLIANT, GLASS, CASE 8JB, 4 PIN
GC9986-8JR	MICROSEMI	获取价格	Mixer Diode, High Barrier, C Band, Silicon, ROHS COMPLIANT, GLASS, CASE 8JR, 4 PIN
GC9986-8JR-128C	MICROSEMI	获取价格	Mixer Diode, High Barrier, C Band, Silicon,
GC9986-8JR-129C	MICROSEMI	获取价格	Mixer Diode, High Barrier, C Band, Silicon,
GC9987	MICROSEMI	获取价格	Schottky Barrier Diodes TM Ultra High Drive Monolithic
GC9987-129C	MICROSEMI	获取价格	Bridge Rectifier Diode, Schottky, 6V V(RRM),

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