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GBU1006 PDF预览

GBU1006

更新时间: 2024-01-09 04:43:57
品牌 Logo 应用领域
虹扬 - HY 二极管局域网
页数 文件大小 规格书
2页 37K
描述
GLASS PASSIVATED BRIDGE RECTIFIERS

GBU1006 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PSFM-T4Reach Compliance Code:unknown
风险等级:4.43其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:175 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBU1006 数据手册

 浏览型号GBU1006的Datasheet PDF文件第2页 
GBU10/15/25 SERIES  
GLASS PASSIVATED  
BRIDGE RECTIFIERS  
REVERSE VOLTAGE - 50 to 1000Volts  
FORWARD CURRENT - 10/15/25 Amperes  
GBU  
.139(3.53)  
.133(3.37)  
FEATURES  
Surge overload rating -220~350 amperes peak  
.874(22.2)  
.860(21.8)  
3.2*3.2  
CHAMFER  
Ideal for printed circuit board  
Reliable low cost construction utilizing  
molded plastic technique  
.154(3.9)  
.146(3.7)  
.752(19.1)  
.720(18.3)  
.232(5.9)  
.224(5.7)  
Plastic material has U/L  
flammability classification 94V-0  
.073(1.85)  
.057(1.45)  
Mounting postition:Any  
.100(2.54)  
.085(2.16)  
.720(18.29)  
.680(17.27)  
.106(2.7)  
.091(2.3)  
.080(2.03)  
.065(1.65)  
.047(1.2)  
.035(0.9)  
.022(.56)  
.018(.46)  
.210 .210 .210  
.190 .190 .190  
(5.3) (5.3) (5.3)  
(4.8) (4.8) (4.8)  
Dimensions in inches and (milimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
GBU  
10005  
15005  
25005  
GBU  
1001  
1501  
2501  
GBU  
1002  
1502  
2502  
GBU  
1004  
1504  
2504  
GBU  
1006  
1506  
2506  
GBU  
1008  
1508  
2508  
GBU  
1010  
1510  
2510  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
30  
50  
100  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
V
V
V
70  
700  
Maximum DC Blocking Voltage  
100  
1000  
25  
10  
15  
Maximum Average Forward (with heatsink Note 2)  
I(AV)  
A
3.0  
4.2  
Rectified Current  
@ TC=100(without heatsink)  
3.2  
GBU  
15  
GBU  
25  
GBU  
10  
Peak Forward Surage Current  
240  
350  
220  
IFSM  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
1.1  
Maximum Forward Voltage at 5.0/7.5/12.5A DC  
VF  
IR  
V
10.0  
500  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@ TJ=25℃  
uA  
@ TJ=125℃  
I2t  
CJ  
A2s  
pF  
I2t Rating for Fusing (t<8.3ms)  
200  
70  
Typical Junction Capacitance Per Element (Note1)  
Typical Thermal Resistance (Note2)  
Operating Temperature Range  
RθJC  
TJ  
/W  
2.2  
-55 to +150  
-55 to +150  
Storage Temperature Range  
TSTG  
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2.Device mounted on 100mm*100mm*1.6mm cu plate heatsink.  
~ 317 ~  

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