5秒后页面跳转
G2U09N70 PDF预览

G2U09N70

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
5页 314K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

G2U09N70 数据手册

 浏览型号G2U09N70的Datasheet PDF文件第1页浏览型号G2U09N70的Datasheet PDF文件第3页浏览型号G2U09N70的Datasheet PDF文件第4页浏览型号G2U09N70的Datasheet PDF文件第5页 
ISSUED DATE :2005/04/21  
REVISED DATE :  
GTM  
CORPORATION  
Electrical Characteristics(Tj = 25ć Unless otherwise specified)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Test Conditions  
600  
-
-
V
VGS=0, ID=250uA  
-
Drain-Source Breakdown Voltage  
650  
-
-
V
BVDSS  
VGS=0, ID=250uA  
VGS=0, ID=250uA  
A
H
700  
-
-
V
Breakdown Voltage Temperature Coefficient  
Gate Threshold Voltage  
Ϧ
BVDSS  
/
Ϧ
Tj  
VGS(th)  
gfs  
V/к  
V
-
2.0  
-
0.6  
-
-
Reference to 25к, ID=1mA  
VDS=VGS, ID=250uA  
VDS=50V, ID=4.5A  
VGS= ̈́20V  
4.0  
Forward Transconductance  
4.5  
-
-
S
̈́1  
Gate-Source Leakage Current  
Drain-Source Leakage Current(Tj=25к)  
-
uA  
uA  
uA  
Ө
IGSS  
-
-
100  
VDS=600V, VGS=0  
VDS=480V, VGS=0  
IDSS  
Drain-Source Leakage Current(Tj=150к)  
-
-
500  
Static Drain-Source On-Resistance  
Total Gate Charge3  
-
-
0.75  
RDS(ON)  
Qg  
VGS=10V, ID=4.5A  
-
44  
11  
12  
19  
21  
56  
24  
2660  
170  
10  
-
-
-
-
-
-
-
-
-
-
ID=9A  
VDS=480V  
VGS=10V  
nC  
Gate-Source Charge  
Gate-Drain (“Miller”) Change  
Turn-on Delay Time3  
Rise Time  
-
Qgs  
-
Qgd  
-
Td(on)  
Tr  
Td(off)  
Tf  
VDD=300V  
ID=9A  
-
ns VGS=10V  
RG=10Ө  
Turn-off Delay Time  
Fall Time  
-
RD=34Ө  
-
Input Capacitance  
-
Ciss  
Coss  
Crss  
VGS=0V  
VDS=25V  
f=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
-
-
Source-Drain Diode  
Parameter  
Forward On Voltage3  
Symbol Min.  
Typ.  
Max.  
1.5  
9
Unit  
V
Test Conditions  
-
-
-
-
VSD  
IS=9A, VGS=0V, Tj=25к  
Continuous Source Current (Body Diode  
)
-
-
A
IS  
VD= VG=0V, VS=1.5V  
1
Pulsed Source Current (Body Diode  
)
40  
A
ISM  
Notes: 1. Pulse width limited by safe operating area.  
2. Staring Tj=25к, VDD=50V, L=6.8mH, RG=25Ө, IAS=9A.  
3. Pulse widthЉ300us, duty cycleЉ2%.  
G2U09N70  
Page: 2/5  

与G2U09N70相关器件

型号 品牌 描述 获取价格 数据表
G2U4407 GTM P-CHANNEL ENHANCEMENT MODE POWER MOSFET

获取价格

G2U9972 GTM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

获取价格

G30 TAYCHIPST Silicon Z–Diodes

获取价格

G30 TE Voltage-Controlled Attenuator Module 100 to 2000 MHz

获取价格

G30 POWERBOX 5WATTS SINGLE OUTPUT DC/DC INDUSTRIAL

获取价格

G30 MACOM Voltage Controlled Module

获取价格