ISSUED DATE :2005/04/21
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
600
-
-
V
VGS=0, ID=250uA
-
Drain-Source Breakdown Voltage
650
-
-
V
BVDSS
VGS=0, ID=250uA
VGS=0, ID=250uA
A
H
700
-
-
V
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Ϧ
BVDSS
/
Ϧ
Tj
VGS(th)
gfs
V/к
V
-
2.0
-
0.6
-
-
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=50V, ID=4.5A
VGS= ̈́20V
4.0
Forward Transconductance
4.5
-
-
S
̈́1
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
uA
uA
uA
Ө
IGSS
-
-
100
VDS=600V, VGS=0
VDS=480V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
500
Static Drain-Source On-Resistance
Total Gate Charge3
-
-
0.75
RDS(ON)
Qg
VGS=10V, ID=4.5A
-
44
11
12
19
21
56
24
2660
170
10
-
-
-
-
-
-
-
-
-
-
ID=9A
VDS=480V
VGS=10V
nC
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
-
Qgs
-
Qgd
-
Td(on)
Tr
Td(off)
Tf
VDD=300V
ID=9A
-
ns VGS=10V
RG=10Ө
Turn-off Delay Time
Fall Time
-
RD=34Ө
-
Input Capacitance
-
Ciss
Coss
Crss
VGS=0V
VDS=25V
f=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
-
-
Source-Drain Diode
Parameter
Forward On Voltage3
Symbol Min.
Typ.
Max.
1.5
9
Unit
V
Test Conditions
-
-
-
-
VSD
IS=9A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
A
IS
VD= VG=0V, VS=1.5V
1
Pulsed Source Current (Body Diode
)
40
A
ISM
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=50V, L=6.8mH, RG=25Ө, IAS=9A.
3. Pulse widthЉ300us, duty cycleЉ2%.
G2U09N70
Page: 2/5