5秒后页面跳转
G11777_15 PDF预览

G11777_15

更新时间: 2022-02-26 14:43:29
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
4页 626K
描述
InGaAs PIN photodiode

G11777_15 数据手册

 浏览型号G11777_15的Datasheet PDF文件第2页浏览型号G11777_15的Datasheet PDF文件第3页浏览型号G11777_15的Datasheet PDF文件第4页 
InGaAs PIN photodiode  
G11777-003P  
Surface mounted type COB (chip on board) package  
The G11777-003P is a small-size near infrared detector available in a surface mount COB (chip on board) package.  
Its size is drastically reduced compared to the previous metal package type (G8376-03). The spectral response covers a  
range from 0.9 to 1.7 m (with peak sensitivity wavelength at 1.55 m) and delivers high sensitivity and low noise. In  
addition to optical communication, other applications include analysis and measurement utilizing near infrared light.  
Features  
Applications  
Low noise  
Measurement  
High sensitivity  
Analysis  
High-speed response  
Photosensitive area: φ0.3 mm  
Surface mount type  
Small size COB package  
Low cost  
Optical light level monitor  
Compatible lead-free reow soldering  
Structure  
Parameter  
Window material  
Package  
Symbol  
Specication  
Unit  
-
-
-
-
-
Resin  
Surface mount type COB  
φ0.3  
Photosensitive area  
mm  
Absolute maximum ratings  
Parameter  
Reverse voltage  
Symbol  
VR  
Value  
10  
Unit  
V
Operating temperature  
Storage temperature  
Topr  
Tstg  
-25 to +80  
-40 to +85  
°C  
°C  
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the  
product within the absolute maximum ratings.  
Electrical and optical characteristics (Ta=25 °C)  
Parameter  
Spectral response range  
Peak sensitivity wavelength  
Symbol  
λ
λp  
Condition  
Min.  
-
-
Typ.  
0.9 to 1.7  
1.55  
Max.  
-
-
Unit  
μm  
μm  
λ=1.3 μm  
λ=λp  
0.70  
0.75  
0.85  
0.95  
-
-
Photosensitivity  
S
A/W  
Dark current  
ID  
fc  
Ct  
Rsh  
D*  
NEP  
VR=5 V  
-
0.1  
500  
6
700  
0.8  
-
10  
-
nA  
MHz  
pF  
Cutoff frequency  
Terminal capacitance  
Shunt resistance  
Detectivity  
VR=5 V, RL=50 Ω  
VR=5 V, f=1 MHz  
VR=10 mV  
λ=λp  
300  
-
100  
MΩ  
1 × 1012  
-
5 × 1012  
5 × 10-15  
-
cm·Hz1/2  
/
W
Noise equivalent power  
λ=λp  
2 × 10-14  
W/Hz1/2  
The G11777-003P may be damaged by electrostatic discharge. Be carefull when using the G11777-003P.  
1
www.hamamatsu.com  

与G11777_15相关器件

型号 品牌 描述 获取价格 数据表
G117E MPD Low Cost, 1W MiniDIP Single & Dual Output DC/DC Converters

获取价格

G117EI MPD Low Cost, 1W MiniDIP High Isolation DC/DC Converters

获取价格

G118 MPD DC-DC Regulated Power Supply Module, 2 Output, 1W, Hybrid, MINI DIP-14/6

获取价格

G1181 ETC Heyco Rubber Grommets

获取价格

G118AL VISHAY SPST, 6 Func, CDFP14

获取价格

G118AL/883 VISHAY Multiplexers/Switches

获取价格