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FTF3020-M/HG PDF预览

FTF3020-M/HG

更新时间: 2024-01-23 20:39:12
品牌 Logo 应用领域
恩智浦 - NXP 传感器图像传感器
页数 文件大小 规格书
16页 225K
描述
Full Frame CCD Image Sensor

FTF3020-M/HG 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknown风险等级:5.61
水平像素:3120安装特点:THROUGH HOLE MOUNT
最高工作温度:60 °C最低工作温度:-40 °C
像素大小:12X12 µm子类别:CCD Image Sensors
表面贴装:NO垂直像素:2060
Base Number Matches:1

FTF3020-M/HG 数据手册

 浏览型号FTF3020-M/HG的Datasheet PDF文件第7页浏览型号FTF3020-M/HG的Datasheet PDF文件第8页浏览型号FTF3020-M/HG的Datasheet PDF文件第9页浏览型号FTF3020-M/HG的Datasheet PDF文件第11页浏览型号FTF3020-M/HG的Datasheet PDF文件第12页浏览型号FTF3020-M/HG的Datasheet PDF文件第13页 
Philips Semiconductors  
Product specification  
Full Frame CCD Image Sensor  
FTF3020-M  
LINEAR/SATURATION  
MIN.  
TYPICAL  
MAX.  
UNIT  
Full-well capacity saturation level (Qmax) 1  
Full-well capacity shading (Qmax, shading) 2  
Full-well capacity linear operation (Qlin) 3  
Charge handling capacity 4  
240  
180  
500  
600  
50  
kel.  
%
10  
350  
600  
200  
kel.  
kel.  
Overexposure 5 handling  
x Qmax level  
1 Qmax is determined from the lowpass filtered image.  
2 Qmax, shading is the maximum difference of the full-well charges of all pixels, relative to Qmax.  
3 The linear full-well capacity Qlin is calculated from linearity test (see dynamic range). The evaluation test guarantees 97% linearity.  
4 Charge handling capacity is the largest charge packet that can be transported through the register and read-out through the output buffer.  
5 Overexposure over entire area while maintaining good Vertical Anti-Blooming (VAB). It is tested by measuring the dark line.  
Charge Handling vs. Integration/Transport Voltage  
600  
10V/14V  
500  
9V/13V  
400  
300  
8V/12V  
200  
100  
0
1
2
3
4
5
6
Exposure (arbitrary units)  
Figure 9 - Charge handling versus integration/transport voltage  
1999 November  
10  

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