Datasheet > FTD2015

FTD2015

更新时间： 2024-09-28 22:32:11

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	44K
描述
Load Switching Applications

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中文翻译

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数据手册

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FTD2015 数据手册

Ordering number:ENN6393

N-Channel Silicon MOSFET

FTD2015

Load Switching Applications

Features

Package Dimensions

unit:mm

· Low ON resistance.

· 4V drive.

2155A

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

[FTD2015]

0.425

3.0

0.65

1 : Drain1

2 : Source1

3 : Source1

4 : Gate1

0.125

0.25

5 : Gate2

6 : Source2

7 : Source2

8 : Drain2

Specifications

SANYO : TSSOP8

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

DSS

Gate-to-Source Voltage

Drain Current (DC)

±20

GSS

Drain Current (pulse)

Allowable Power Dissipation

Total Dissipation

PW≤10µs, duty cycle≤1%

0.8

Mounted on a ceramic board (1000mm²×0.8mm) 1unit

Mounted on a ceramic board (1000mm²×0.8mm)

˚C

1.3

Channel Temperature

Storage Temperature

Tch

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

D GS

µA

(BR)DSS

=30V, V =0

1.0

DSS

=±16V, V =0

=10V, I =1mA

=10V, I =4A

±10

2.4

GSS

(off)

1.0

4.5

| yfs |

Forward Transfer Admittance

6.5

(on)1

=4A, V =10V

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=4A, V =4V

Input Capacitance

Ciss

=10V, f=1MHz

550

130

Output Capacitance

Reverse Transfer Capacitance

Marking : D2015

Coss

Crss

=10V, f=1MHz

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

30100TS (KOTO) TA-2499 No.6393–1/4

12 3 4

中文翻译

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与FTD2015相关器件

型号	品牌	获取价格	描述	数据表
FTD2016	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 30V V(BR)DSS \| 4A I(D) \| TSSOP
FTD2017	SANYO	获取价格	Load Switching Applications
FTD2017C	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
FTD2017CTL	ONSEMI	获取价格	Power Field-Effect Transistor, 6A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Meta
FTD2017C-TL	ONSEMI	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,6A I(D),TSSOP
FTD2017M	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
FTD2017R	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
FTD2019	SANYO	获取价格	Load Switching Applications
FTD2019	TYSEMI	获取价格	Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS -10 V
FTD2019	KEXIN	获取价格	Dual N-Channel MOSFET

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