Datasheet > FT28C010-25DM-AT

FT28C010-25DM-AT

更新时间： 2024-02-22 06:49:01

品牌	Logo	应用领域
福思力 - FORCE		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
30页	2468K
描述
128K x 8 Bit 5V EEPROM

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中文翻译

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数据手册

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FT28C010-25DM-AT 数据手册

FT28C010-xxxxx-X

128K x 8 Bit 5V EEPROM

FEATURES

• Access Time: 120ns

• Simple Byte and Page Write

—Single 5V Supply

DESCRIPTION

The Force FT28C010 is a 128K x 8 E PROM, fabricated

with, high performance, floating gate CMOS technology.

Like most Force programmable nonvolatile memories

the FT28C010 is a 5V only device. The FT28C010

features the JEDEC approved pinout for byte-

wide memories, compatible with industry standard

EPROMs.

—No External High Voltages or VPP Control Circuits

—Self-Timed

—No Erase Before Write

—No Complex Programming Algorithms

—No Overerase Problem

• Low Power CMOS:

The FT28C010 supports a 256-byte page write operation,

effectively providing a 19 µs/byte write cycle and en-

abling the entire memory to be typically written in less

than 2.5 seconds. The FT28C010 also features DATA

Polling and Toggle Bit Polling, system software support

schemes used to indicate the early completion of a write

cycle. In addition, the FT28C010 supports Software Data

Protection option.

—Active: 50mA

—Standby: 500µA

• Software Data Protection

—Protects Data Against System Level

Inadvertant Writes

• High Speed Page Write Capability

• Highly Reliable Cell

—Endurance: 100,000 Write Cycles

Force E PROMs are designed and tested for applica-

—Data Retention: 100 Years

• Early End of Write Detection

—DATA Polling

tions requiring extended endurance. Data retention is

specified to be greater than 100 years.

—Toggle Bit Polling

•

-X Manufactured using Xicor Die

FT28C010-xxxxx-AT

128K x 8 Bit 5V EEPROM

FEATURES

DESCRIPTION

• Fast Read Access Time 120ns

• Automatic Page Write Operation

Internal Address and Data Latches for

128-Bytes Internal Control Timer

• Fast Write Cycle Time

Page Write Cycle Time - 10 ms Maximum

1 to 128-Byte Page Write Operation

• Low Power Dissipation

The FT28C010 is a high-performance Electrically Erasable

and Programmable Read Only Memory. Its one megabit of

memory isorganised as 131,072 words by 8 bits.

Manufactured with advanced nonvolatile CMOS technology,

the device offersaccess times to 120 ns with power dissipa-

tion of just 440 mW. When the device isdeselected, the CMOS

(Cont)

standby current is less than 300 mA.

80 mA Active Current

300 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

Endurance: 10

Data Retention: 10 Years

• Single 5V ± 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• -AT Manufactured using Atmel Die

Rev 1.1

1/30

2011

12 3 4 5 6 7...30

中文翻译

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与FT28C010-25DM-AT相关器件

型号	品牌	获取价格	描述	数据表
FT28C010-25DM-X	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25EB-AT	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25EB-X	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25EI-AT	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25EI-X	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25EM-AT	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25EM-X	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25FB-AT	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25FB-X	FORCE	获取价格	128K x 8 Bit 5V EEPROM
FT28C010-25FI-AT	FORCE	获取价格	128K x 8 Bit 5V EEPROM

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