5秒后页面跳转
FSTJ9055R4 PDF预览

FSTJ9055R4

更新时间: 2024-09-24 22:19:43
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
8页 75K
描述
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

FSTJ9055R4 数据手册

 浏览型号FSTJ9055R4的Datasheet PDF文件第2页浏览型号FSTJ9055R4的Datasheet PDF文件第3页浏览型号FSTJ9055R4的Datasheet PDF文件第4页浏览型号FSTJ9055R4的Datasheet PDF文件第5页浏览型号FSTJ9055R4的Datasheet PDF文件第6页浏览型号FSTJ9055R4的Datasheet PDF文件第7页 
FSTJ9055D, FSTJ9055R  
TM  
Data Sheet  
June 2000  
File Number 4756.1  
Radiation Hardened, SEGR Resistant  
P-Channel Power MOSFETs  
Features  
• 62A, -60V, r  
= 0.023Ω  
DS(ON)  
The Discrete Products Operation of Intersil has developed a  
series of Radiation Hardened MOSFETs specifically  
designed for commercial and military space applications.  
Immunity to Single Event Effects (SEE) is combined with  
100K RADs of total dose hardness to provide devices which  
are ideally suited to harsh space environments. The dose  
rate and neutron tolerance necessary for military  
Total Dose  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
applications have not been sacrificed.  
• Dose Rate  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
• Photo Current  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS)  
structure. It is specially designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, motor drives,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
- 6nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications for 3E13  
2
Neutrons/cm  
2
- Usable to 3E14 Neutrons/cm  
Symbol  
D
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
G
S
Formerly available as type TA17750T.  
Packaging  
Ordering Information  
TO-254AA  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSTJ9055D1  
FSTJ9055D3  
FSTJ9055R1  
FSTJ9055R3  
FSTJ9055R4  
10K  
100K  
100K  
100K  
Commercial  
TXV  
Space  
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
1

与FSTJ9055R4相关器件

型号 品牌 获取价格 描述 数据表
FSTK PANDUIT

获取价格

Opticom Splice Modules, Trays, and Holders
FSTL, FSTS, FSWL VISHAY

获取价格

Wirewound Resistor, Industrial Power, Silicone Coated, Tubular
FSTMABL PANDUIT

获取价格

ST Fiber Optic Connectors – Field Polish Te
FSTMARD PANDUIT

获取价格

ST Fiber Optic Connectors – Field Polish Te
FSTMM50BL PANDUIT

获取价格

ST* OPTI-CRIMP ® Fiber Optic Connector — P
FSTMM50RD PANDUIT

获取价格

ST* OPTI-CRIMP ® Fiber Optic Connector — P
FSTMMBL PANDUIT

获取价格

ST* OPTI-CRIMP ® Fiber Optic Connector — P
FSTMMRD PANDUIT

获取价格

ST* OPTI-CRIMP ® Fiber Optic Connector — P
FSTSABU PANDUIT

获取价格

ST Fiber Optic Connectors – Field Polish Te
FSTU16211 FAIRCHILD

获取价格

24-Bit Bus Switch with .2V Undershoot Protection (Preliminary)