Datasheet > FSL110R

FSL110R

更新时间： 2024-01-13 14:12:20

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	62K
描述
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSL110R 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	CYLINDRICAL, O-MBCY-W3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.92
其他特性：	RADIATION HARDENED	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	最大漏极电流 (Abs) (ID)：	3.5 A
最大漏极电流 (ID)：	3.5 A	最大漏源导通电阻：	0.6 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-205AF
JESD-30 代码：	O-MBCY-W3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	N-CHANNEL
功耗环境最大值：	15 W	最大功率耗散 (Abs)：	15 W
最大脉冲漏极电流 (IDM)：	10.5 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	最大关闭时间（toff）：	85 ns
最大开启时间（吨）：	90 ns

FSL110R 数据手册

FSL110D, FSL110R

Data Sheet

October 1998

File Number 4224.3

3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR

Resistant, N-Channel Power MOSFETs

Features

• 3.5A, 100V, r

• Total Dose

= 0.600Ω

DS(ON)

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 0.3nA Per-RAD(Si)/s Typically

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Symbol

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

Package

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

TO-205AF

10K

Commercial

TXV

FSL110D1

FSL110D3

FSL110R1

FSL110R3

FSL110R4

10K

100K

Commercial

TXV

Space

Formerly available as type TA17616.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

4-1

12 3 4 5 6 7 8

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型号	品牌	描述	获取价格	数据表
FSL110R1	INTERSIL	3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	获取价格
FSL110R3	INTERSIL	3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	获取价格
FSL110R4	INTERSIL	3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	获取价格
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