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FS14SM-10 PDF预览

FS14SM-10

更新时间: 2024-01-10 23:28:27
品牌 Logo 应用领域
POWEREX 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
4页 52K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

FS14SM-10 技术参数

生命周期:Active零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.38
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.64 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):42 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FS14SM-10 数据手册

 浏览型号FS14SM-10的Datasheet PDF文件第1页浏览型号FS14SM-10的Datasheet PDF文件第3页浏览型号FS14SM-10的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS14SM-10  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
500  
±30  
Typ.  
Max.  
ID = 1mA, VGS = 0V  
V
V
(BR) DSS Drain-source breakdown voltage  
(BR) GSS Gate-source breakdown voltage  
V
V
IG = ±100µA, VDS = 0V  
VGS = ±25V, VDS = 0V  
VDS = 500V, VGS = 0V  
ID = 1mA, VDS = 10V  
ID = 7A, VGS = 10V  
ID = 7A, VGS = 10V  
ID = 7A, VDS = 10V  
IGSS  
IDSS  
Gate-source leakage current  
Drain-source leakage current  
Gate-source threshold voltage  
Drain-source on-state resistance  
Drain-source on-state voltage  
Forward transfer admittance  
Input capacitance  
±10  
1
µA  
mA  
V
VGS (th)  
rDS (ON)  
VDS (ON)  
yfs  
2
3
4
0.50  
3.5  
7.0  
1500  
180  
30  
0.64  
4.5  
V
4.5  
S
Ciss  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 25V, VGS = 0V, f = 1MHz  
Coss  
Crss  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
td (on)  
tr  
30  
Rise time  
50  
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω  
td (off)  
tf  
Turn-off delay time  
130  
50  
Fall time  
IS = 7A, VGS = 0V  
Channel to case  
VSD  
Source-drain voltage  
Thermal resistance  
1.5  
2.0  
0.83  
Rth (ch-c)  
°C/W  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURVE  
MAXIMUM SAFE OPERATING AREA  
200  
160  
120  
80  
5
tw=10µs  
3
2
101  
7
100µs  
1ms  
5
3
2
100  
7
10ms  
DC  
5
3
TC = 25°C  
Single Pulse  
2
40  
10–1  
7
5
0
0
50  
100  
150  
200  
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103  
2
CASE TEMPERATURE TC (°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
VGS=20V  
10V  
50  
40  
30  
20  
10  
0
20  
16  
12  
8
PD = 150W  
TC = 25°C  
Pulse Test  
PD = 150W  
8V  
TC = 25°C  
Pulse Test  
6V  
VGS = 20V  
10V  
8V  
6V  
5V  
4
5V  
50  
0
0
10  
20  
30  
40  
0
4
8
12  
16  
20  
DRAIN-SOURCE VOLTAGE VDS (V)  
DRAIN-SOURCE VOLTAGE VDS (V)  
Feb.1999  

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