Datasheet > FR85B05

FR85B05

更新时间： 2024-09-29 02:55:19

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	790K
描述
Silicon Fast Recovery Diode

阅读下载

中文翻译

获取价格

数据手册

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FR85B05 数据手册

FR85B05 thru FR85JR05

V_RRM= 100 V - 600 V

I_F= 85 A

Silicon Fast

Recovery Diode

Features

• High Surge Capability

• Types from 100 V to 600 V V_RRM

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

Stud Stud

(R)

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

FR85J(R)05

Parameter

Symbol

FR85B(R)05

FR85D(R)05

FR85G(R)05

Unit

Repetitive peak reverse

voltage

V_RRM

600

100

200

400

V_RMS

V_DC

420

600

RMS reverse voltage

DC blocking voltage

140

200

280

400

100

T_C≤ 100 °C

I_F

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

I_F,SMT_C= 25 °C, t_p= 8.3 ms

1369

T_j

-55 to 150

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

FR85J(R)05

Parameter

Symbol

FR85B(R)05

FR85D(R)05

FR85G(R)05

Unit

V_F

I_R

I_F= 85 A, T_j= 25 °C

V_R= 100 V, T_j= 25 °C

V_R= 100 V, T_j= 125 °C

1.3

Diode forward voltage

Reverse current

1.3

μA

Recovery Time

I_F=0.5 A, I_R=1.0 A,

I_RR= 0.25 A

Maximum reverse recovery

time

T_RR

500

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/fr85b05.pdf

12 3

中文翻译

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