Datasheet > FR3JB-T

FR3JB-T

更新时间： 2024-10-02 09:49:43

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	86K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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FR3JB-T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.3	JESD-609代码：	e0
湿度敏感等级：	1	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

FR3JB-T 数据手册

FR3AB

THRU

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

FR3MB

Features

3 Amp Fast Recovery

Silicon Rectifier

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Easy Pick And Place

High Temp Soldering: 260°C for 10 Seconds At Terminals\

Fast Recovery Times For High Effieciency

50 to 1000 Volts

DO-214AA

(SMB) (LEAD FRAME)

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 10°C/W Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

FR3AB

FR3BB

FR3DB

FR3GB

FR3JB

FR3KB

FR3MB

FR3AB

FR3BB

FR3DB

FR3GB

FR3JB

FR3KB

FR3MB

35V

70V

100V

200V

400V

600V

800V

1000V

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

DIMENSIONS

Average Forward

Current

I_F(AV)

3.0A

T_J= 120°C

INCHES

MIN

4.06

3.30

0.15

0.76

5.08

2.01

1.91

DIM

MAX

.185

.155

.012

.060

.220

.103

.087

.008

MAX

4.70

3.94

0.31

1..52

5.59

2.62

2.21

0.203

NOTE

.160

.130

.006

.030

.200

.079

.075

.002

Peak Forward Surge

Current

I_FSM

100A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.30V

I_FM= 3.0A;

T_J= 25°C*

0.05

SUGGESTED SOLDER

PAD LAYOUT

10µA

250µA T_J= 100°C

T_J= 25°C

0.106

Maximum Reverse

Recovery Time

FR3AB-GB

FR3JB

FR3KB-MB

Typical Junction

Capacitance

0.083”

T_rr

C_J

150ns I_F=0.5A, I_R=1.0A,

250ns I_rr=0.25A

500ns

0.050”

80pF

Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 200 µsec, Duty cycle 2%

www.mccsemi.com

1 of 4

Revision: 2

2006/05/19

12 3 4

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