Datasheet > FR3GB

FR3GB

更新时间： 2024-09-29 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管功效
页数	文件大小	规格书
2页	307K
描述
3.0A patch fast recovery diode 400V SMB series

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中文翻译

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数据手册

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FR3GB 数据手册

FR3AB - FR3MB

SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 50-1000V

CURRENT: 3.0 A

Features

Glass Passivated Die Construction

Fast Recovery Time for High Efficiency

Low Forward Voltage Drop and High Current

Capability

Ideally Suited for Automatic Assembly

Plastic Material: UL Flammability

Classification Rating 94V-0

SMB(DO-214AA)

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMB(DO-214AA),Molded Plastic

Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol FR3AB FR3BB FR3DB FR3GB FR3JB FR3KB FR3MB Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

I_O

RMS Reverse Voltage

280

3.0

= 75ꢀC

@ T_T

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

100

Forward Voltage

@ I

_F= 3.0A

V_FM

I_RM

1.3

5.0

250

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A=

@ TA = 125ꢀC

25ꢀC

ꢁA

150

250

500

t_rr

C_j

Maximum Recovery Time (Note 3)

Typical Junction Capacitance (Note 2)

R_ꢂJT

T_j,T_STG

Typical Thermal Resistance Junction to Terminal (Note 1)

Operating and Storage Temperature Range

K/W

ꢀC

-65 to +150

Notes:

1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm²(0.013 mm thick) copper pad as heat sink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Reverse recovery test conditions: I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

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