FR1D-T3

更新时间： 2024-09-25 22:24:51

品牌	Logo	应用领域
WTE		整流二极管光电二极管快速恢复二极管
页数	文件大小	规格书
3页	52K
描述
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER

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中文翻译

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数据手册

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FR1D-T3 数据手册

WTE

PO WER SEMICONDUCTORS

FR1A – FR1K

1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 30A Peak

Low Power Loss

Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMB/DO-214AA

Min

Mechanical Data

Dim

Max

3.94

4.70

2.11

Case: Molded Plastic

3.30

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

4.06

1.91

0.152

5.08

0.305

5.59

2.44

0.203

1.27

Weight: 0.093 grams (approx.)

2.13

0.051

0.76

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

FR1A

FR1B

FR1D

FR1G

FR1J

FR1K

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

280

600

420

800

560

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

@T_L= 90°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.30

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

300

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

150

250

500

R^ꢀ^JL

T^j,T^STG

K/W

°C

Operating and Storage Temperature Range

-50 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

FR1A – FR1K

1 of 3

12 3

中文翻译

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