Datasheet > FR103G

FR103G

更新时间： 2024-04-09 18:58:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
2页	281K
描述
1A,200V,150ns,Fast Recovery Rectifiers

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FR103G 数据手册

RATINGS AND CHARACTERISTIC CURVES

FR101G --- FR107G

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

N 1.

t r r

+0.5A

D.U.T.

(+)

PULSE

25VDC

(approx)

(-)

GENERATOR

(NOTE2)

-0.25A

OSCILLOSCOPE

(NOTE 1)

NONIN-

DUCTIVE

-1.0A

1 c m

SET TIMEBASEFOR 50/100 ns/cm

NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.

JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50

FIG.3 -- TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG.2 -- TYPICAL FORWARD CURRENT DERATING CURVE

1.25

Single Phase

Half Wave 60HZ

1.00

0.75

Resistive or

Inductive Load

TJ=25

Pulse Width=300µS

1.0

0.50

0.25

0.1

0.01

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

100

125

150 175

LEAD TEMPERATURE,

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.4 --PEAK FORWARD SURGE CURRENT

FIG.5 -- TYPICAL JUNCTION CAPACITANCE

200

100

8.3ms Single Half

Sine-Wave

TJ=25

0.1 0.2 0.4

10 20 40

100

50 100

NUMBER OF CYCLES AT 60Hz

REVERSE VOLTAGE,VOLTS

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 2069005

下载PDF

与FR103G相关器件

型号	品牌	描述	获取价格	数据表
FR103-G	SENSITRON	1A, 200V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2	获取价格
FR103G-E	GULFSEMI	FAST RECOVERY GLASS PASSIVATED RECTIFIER VOLTAGE: 50 to 1000V CURRENT: 1.0A	获取价格
FR103G-E	RECTRON	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,	获取价格
FR103GH	FORMOSA	1.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS	获取价格
FR103GH02	RECTRON	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,	获取价格
FR103GH02-1	RECTRON	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,	获取价格