Datasheet > FR0016_15

FR0016_15

更新时间： 2024-09-26 01:20:15

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P-Channel MOSFET

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FR0016_15 数据手册

SFRC9130S.5B

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

10 AMP /100 Volts

300 mΩ

POWERShield^TM

Radiation Tolerant

P-Channel MOSFET

Technology

PS-Hard Radiation Hardened MOSFETs

Features:

SFRC9130

__ B__

•

Advanced POWERShield^TMTechnology

Screening ^2/__ = Commercial

TX = TX Level

│

└

•

TID 100K Rad

Excellent high temperature stability

Hermetically Sealed Power Package

Low Total Gate Charge

TXV = TXV Level

S = S Level

Fast Switching

Replacement for IRHNJ9130 and F9130 types

└

Package: S.5 = SMD.5

Maximum Ratings

Symbol

V_DSS

Value

-100

±20

Units

Drain - Source Voltage

Gate – Source Voltage

V_GS

@ T_C= 25ºC

@ T_C= 100ºC

I_D1

I_D2

Max. Continuous Drain Current (package limited)

Max. Avalanche current

@ L= 5.0 mH

@ T_C= 25ºC

I_AR

E_AR

E_AS

9.8

5.2

320

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Total Power Dissipation

P_D

Operating & Storage Temperature

-55 to +150

ºC

T_OP& T_STG

Maximum Thermal Resistance

1.65

ºC/W

R_0JC

(Junction to Case)

.304

.020

PACKAGE OUTLINE:

.103

.030 MIN

.288

.010

.087

SMD.5

PINOUT:

PIN 1: DRAIN

PIN 2: SOURCE

PIN 3: GATE

.128

.112

.030 MIN

.408

.392

.233

.217

2x .010

MAX

.304

.288

.145

.115

NOTE: All specifications are subject to change without notification.

DATA SHEET #: FR0016A

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

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