FUJI POWER MOSFET
FMV60N125S2HF
http://www.fujielectric.com/products/semiconductor/
Safe Operating Area
Allowable Power Dissipation
ID=f(VDS):Duty=0(Single pulse),TC=25℃
PD=f(TC)
100
10
60
50
40
30
20
10
t=
1us
10us
Operation in this are is
limited by RDS(on)
100us
1
1ms
0.1
0.01
0
0
1
0
0
10
100
1000
50
100
150
VDS[V]
TC [℃]
Typical Output Characteristics
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25℃
ID=f(VDS):80 μs pulse test,Tch=150℃
80
70
60
50
40
30
20
10
0
45
40
35
30
25
20
15
10
5
20V
20V
10V
10V
9V
8.5V
8V
9V
7.5V
8.5V
8V
7V
6.5V
6V
7.5V
7V
VGS=5.5V
VGS=6.5V
0
0
5
10
15
20
5
10
15
20
VDS [V]
VDS [V]
Typical Output Characteristics
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=150℃
ID=f(VDS):80 μs pulse test,Tch=25℃
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
8V
7.5V
6.5V
7V
6V
5.5V
6.5V
8.5V
7V
9V
7.5V
10V
8V
8.5V
9V
VGS=20V
10V
VGS=20V
0
20
40
ID[A]
60
80
10
20
30
40
ID[V]
3