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FEP16FT PDF预览

FEP16FT

更新时间: 2024-01-05 20:21:14
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 80K
描述
16A Ultra Fast Recovery Rectifier, TO-220 3L, 1000-RAIL

FEP16FT 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 V最高工作温度:150 °C
最大输出电流:16 A最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NOBase Number Matches:1

FEP16FT 数据手册

 浏览型号FEP16FT的Datasheet PDF文件第2页浏览型号FEP16FT的Datasheet PDF文件第3页 
PIN 1  
PIN 3  
+
CASE  
PIN 2  
FEP16AT - FEP16JT  
Positive CT  
Features  
PIN 1  
PIN 3  
-
CASE  
PIN 2  
Low forward voltage drop.  
High surge current capacity.  
High current capability.  
High reliability.  
Negative CT  
Suffix "A"  
1
2
PIN 1  
PIN 3  
3
AC  
TO-220AB  
CASE  
PIN 2  
Doubler  
Suffix "D"  
• Average Forward Current Rating at 16A (8A per Diode).  
Fast Rectifiers (Glass Passivated)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Units  
Parameter  
16AT 16BT 16CT 16DT 16FT 16GT  
16HT  
16JT  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse  
Voltage  
Average Rectified Forward Current,  
50  
100 150 200 300  
400  
500  
600  
V
A
A
16  
.375 " lead length @ T = 100 C  
°
A
Non-repetitive Peak Forward Surge  
Current  
200  
8.3 ms Single Half-Sine-Wave  
Storage Temperature Range  
-55 to +150  
-55 to +150  
C
°
Tstg  
TJ  
Operating Junction Temperature  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
8.33  
15  
W
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Lead  
RθJA  
RθJL  
°C/W  
°C/W  
2.2  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Device  
Symbol  
Units  
Parameter  
16AT 16BT 16CT 16DT 16FT 16GT  
16HT  
16JT  
VF  
trr  
Forward Voltage @ 8.0A  
Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A  
0.95  
35  
1.3  
1.5  
V
50  
ns  
IR  
Reverse Current @ rated VR  
TA = 25°C  
10  
500  
µA  
µA  
TA = 100°C  
CT  
Total Capacitance  
VR = 4.0. f = 1.0 MHz  
pF  
85  
60  
2001 Fairchild Semiconductor Corporation  
FEP16AT - FEP16JT, Rev. C  

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