Electrical Characteristics
VBIAS (VDD, VBS) = 15.0V, RDT = GND, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are
referenced to GND. The VO and IO parameters are referenced to GND and VS is applicable to HO and LO.
Symbol
SUPPLY CURRENT SECTION
IQBS Quiescent VBS supply current
IQDD
Characteristics
Test Condition
Min. Typ. Max. Unit
VIN=0V or 5V
35
90
Quiescent VDD supply current
VDD supply current at shutdown mode
Operating VBS supply current
Operating VDD supply current
Offset supply leakage current
VIN=0V or 5V, RDT=0Ω
SD=GND
650
650
400
900
900
700
(4)
ISD
μA
IPBS
IPDD
ILK
fIN=20kHz,rms value
fIN=20kHz,rms value,RDT=0Ω
VB=VS=600V
950 1200
10
POWER SUPPLY SECTION
VDDUV+ VDD and VBS supply under-voltage
VBSUV+ positive going threshold
10.7 11.6 12.5
10.0 10.8 11.6
0.8
VDDUV- VDD and VBS supply under-voltage
VBSUV- negative going threshold
V
VDDUVH VDD and VBS supply under-voltage
VBSUVH lockout hysteresis
GATE DRIVER OUTPUT SECTION
VOH
VOL
IO+
High-level output voltage, VBIAS-VO
Low-level output voltage, VO
IO=20mA
1.0
0.6
V
V
Output high short-circuit pulse current
Output low short-circuit pulsed current
VO=0V, VIN=5V with PW<10µs
VO=15V, VIN=0V with PW<10µs
250
500
350
650
mA
mA
IO-
Allowable negative VS pin voltage for IN
signal propagation to HO
VS
-9.8 -7.0
V
LOGIC INPUT SECTION (INPUT AND SHUTDOWN)
VIH
VIL
Logic "1" input voltage
2.9
2.9
V
V
Logic "0" input voltage
1.2
IIN+
IIN-
Logic "1" input bias current
Logic "0" input bias current
Shutdown "1" input voltage
Shutdown "0" input voltage
Input pull-down resistance
VIN=5V
VIN=0V
50
100
2.0
1.2
μA
μA
V
SD+
SD-
RPD
V
100
KΩ
Note:
4.This parameter, although guaranteed, is not 100% tested in production.
© 2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN7383 Rev. 1.0.0
6