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FAN3229T

更新时间： 2024-01-24 20:42:42

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		驱动器栅极栅极驱动
页数	文件大小	规格书
12页	459K
描述
Application Review and Comparative Evaluation of Low-Side Gate Drivers

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技术参数
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FAN3229T 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SOP, SOP8,.25	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.31.00.01
Factory Lead Time：	1 week	风险等级：	1.53
Samacsys Description：	FAIRCHILD SEMICONDUCTOR - FAN3229TMX - DRIVER, MOSFET, DUAL OR, 2A, TTL, 8SOIC	内置保护：	TRANSIENT
高边驱动器：	NO	接口集成电路类型：	FULL BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e4
长度：	4.9 mm	湿度敏感等级：	1
功能数量：	2	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-40 °C
输出电流流向：	SOURCE AND SINK	标称输出峰值电流：	3 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	12 V	认证状态：	Not Qualified
座面最大高度：	1.75 mm	子类别：	MOSFET Drivers
最大供电电压：	18 V	最小供电电压：	4.5 V
标称供电电压：	12 V	表面贴装：	YES
温度等级：	AUTOMOTIVE	端子面层：	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	0.022 µs	接通时间：	0.017 µs
宽度：	3.9 mm	Base Number Matches：	1

FAN3229T 数据手册

AN-6069

APPLICATION NOTE

Figure 13. Improved Gate Drive Transformer Circuit

The PNP transistor added at the gate of the MOSFET is

turned on when the secondary voltage goes negative to

speed up the turn-off time of the MOSFET.

(c)

Reference [3], “Design and Application Guide for High

Speed MOSFET Gate Drive Circuits,” offers further

information on transformer-coupled gate drives and should

be consulted for detailed design methodology beyond the

scope of the present topic.

Figure 11. Current Flow and Diode Clamp Circuit for

Transformer Driver

If the transformer is designed with low leakage inductance,

the propagation delays through the transformer can be less

than 50ns. The GT03 series of transformers from ICE

Components^[4]is an example of devices with leakage

inductance of a few hundred nanoHenries. This is achieved

by using tightly coupled windings on a small ferrite core.

Discrete or Integrated Drivers

External drivers can be designed using discrete transistors or

integrated circuit solutions that come as predesigned blocks.

To select a solution, designers must evaluate the competing

size, features, cost, and the overall range of applications to

be covered. Regardless of the driver selection, there are

some common requirements. Integrated or discrete-design

drivers need a local bypass capacitor to supply the high

current pulses delivered during the switching intervals and

might include a resistor between the driver and the PWM

supply V_DD. In general, drivers have the greatest impact

when located close to the MOSFET gate-source connections

to minimize parasitic inductance and resistance effects.

In the previous transformer examples, the positive and

negative peaks vary with duty cycle, while the secondary

voltage V_Sswings around zero volts. In a pulse transformer

application, the pulses might feed circuits that cannot accept

the negative-going pulses. The circuit in Figure 12

incorporates a clamp circuit consisting of a second coupling

capacitor C_CSand a diode that restores the DC level of the

secondary voltage.

Discrete solutions can be designed using bipolar transistors,

as shown in Figure 14. The NPN/PNP totem pole features a

non-inverting configuration driven by the PWM output. This

circuit prevents shoot-through in the bipolar stage because

only one of the totem pole devices can be forward biased at

a time. In the bipolar common emitter configuration, the

driving signal must have fast edges to provide fast

Figure 12. Pulse Transformer with DC Restore Circuit

Series resistor R_Sserves to damp the initial transient at

startup when C_CSis initially uncharged, and is often a

discrete resistor in addition to the internal driver impedance.

From classical RLC circuit theory, a value of R_Sfor critical

damping is approximately:

switching, and it should be noted that the MOSFET gate is

not ohmically connected to the rail when high or low.

L_MAG

R_S= 2⋅

(15)

C_CC

where L_MAGis the magnetizing inductance of the

transformer.

Figure 13 shows a gate drive application circuit that utilizes

the DC restore circuit of the previous example with some

additional modifications.

Figure 14. Discrete Bipolar Transistor Drive Circuit

Rev. 1.0.3 • 1/6/10

www.fairchildsemi.com

1...3 4 567 8 9...12

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与FAN3229T相关器件

型号	品牌	描述	获取价格	数据表
FAN3229TMPX	FAIRCHILD	Dual 2A High-Speed, Low-Side Gate Drivers	获取价格
FAN3229TMPX	ONSEMI	Dual 2-A High-Speed, Low-Side Gate Drivers	获取价格
FAN3229TMX	FAIRCHILD	Dual 2A High-Speed, Low-Side Gate Drivers	获取价格
FAN3229TMX	ONSEMI	Dual 2-A High-Speed, Low-Side Gate Drivers	获取价格
FAN3229TMX_12	FAIRCHILD	Dual 2A High-Speed, Low-Side Gate Drivers	获取价格
FAN3229TMX-F085	ONSEMI	Dual 2-A High-Speed, Low-Side Gate Drivers	获取价格

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