Datasheet > 驱动程序和接口 > MOSFET 驱动器> FAN3224C

FAN3224C

更新时间： 2024-01-26 14:44:32

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		驱动器栅极栅极驱动
页数	文件大小	规格书
12页	459K
描述
Application Review and Comparative Evaluation of Low-Side Gate Drivers

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技术参数
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FAN3224C 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SOIC-8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
Factory Lead Time：	4 weeks	风险等级：	1.35
内置保护：	UNDER VOLTAGE	高边驱动器：	NO
接口集成电路类型：	FULL BRIDGE BASED PERIPHERAL DRIVER	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e4	长度：	4.9 mm
湿度敏感等级：	1	功能数量：	2
端子数量：	8	最高工作温度：	125 °C
最低工作温度：	-40 °C	输出电流流向：	SOURCE AND SINK
输出极性：	TRUE	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	12 V
认证状态：	Not Qualified	座面最大高度：	1.75 mm
子类别：	MOSFET Drivers	最大压摆率：	0.95 mA
最大供电电压：	18 V	最小供电电压：	4.5 V
标称供电电压：	12 V	表面贴装：	YES
温度等级：	AUTOMOTIVE	端子面层：	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	3.9 mm	Base Number Matches：	1

FAN3224C 数据手册

AN-6069

APPLICATION NOTE

with magnetizing inductance L_MAG. In both cases, the DC

blocking capacitor C_Cis large enough so that its voltage is

approximately constant.

applied directly to the primary winding of T1, the

transformer would saturate and not be able to transmit useful

information. To prevent this, coupling capacitor C_Cis

inserted in series with the primary winding to block the DC

voltage while passing the AC portion of the V_OUTsignal.

Transformers designed for pulse and gate drive applications

usually specify a voltage-time product the device can

withstand without saturating the transformer.

In many cases, the same transformer could be used as either

a pulse transformer operation or a gate drive transformer. In

0, the major difference between the two applications is in the

current waveforms. With a constant drive voltage and

magnetizing inductance, L_MAG, the magnetizing current I_MAG

is the same in both circuits. In the pulse transformer

waveforms shown in 0(a), the resistor current IR follows the

secondary voltage V_S, and the driver supplies a current that

is the sum of these two components. In the MOSFET gate

drive waveforms shown in 0(b),

Figure 8. Simplified Pulse Transformer Circuit

In Figure 9, the circuit is modified so that the resistor is

replaced by the gate-to-source terminal of a MOSFET

located on the high side of a bridge circuit.

+Bulk

the gate current IG is positive pulses at turn on and negative

pulses at turn off. As in the first example, the driver

supplies a current that is the sum of these two components,

but the waveform has a larger RMS value due to the high-

current pulses.

NP:NS

V_DD

I_DR

I_G

V_OUT

C_C

V_P

V_S

I_MAG

It is important to examine the direction of current flow

between driver and transformer for the examples of 0. When

L_MAG

_OUTswings high as shown Figure 11(a), one might expect

the driver to immediately source current. However, the

magnetizing current is negative and, if the load current is not

larger than the magnetizing current, the driver must sink

current until IDR goes positive. The opposite situation exists

in Figure 11(b), when V_OUTgoes from high to low and the

driver must source current when expected to operate as a

current sink. Figure 11(c) shows additional diodes providing

a current path if the driver cannot sink current when V_OUTis

high or source current when V_OUTis low, as found in drivers

with a bipolar output stage.

Figure 9. Simplified Gate Drive Transformer Circuit

0(a) shows the operational waveforms for the pulse

transformer circuit, while 0(b) shows operation in a gate

drive application.

V_OUT

I_DR

Gate Transformer

Pulse Transformer

(a)

(b)

Figure 10. (a) Pulse Transformer Waveforms and

(b) Gate Drive Transformer Waveforms

The output of the driver swings from 0V to V_DDproducing a

DC component equal to V_DDx duty cycle. If this voltage is

(b)

Rev. 1.0.3 • 1/6/10

www.fairchildsemi.com

1 2 3 456 7 8...12

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