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F0100406B PDF预览

F0100406B

更新时间: 2024-01-24 23:19:58
品牌 Logo 应用领域
EUDYNA 放大器
页数 文件大小 规格书
10页 278K
描述
3.3V 1.25Gbit/s NRZ Receiver Transimpedance Amplifier

F0100406B 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:DIE,针数:9
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.84JESD-30 代码:R-XUUC-N9
功能数量:1端子数量:9
最高工作温度:85 °C最低工作温度:
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:RECTANGULAR封装形式:UNCASED CHIP
认证状态:Not Qualified标称供电电压:3.3 V
表面贴装:YES技术:BIPOLAR
电信集成电路类型:TELECOM CIRCUIT温度等级:OTHER
端子形式:NO LEAD端子位置:UPPER
Base Number Matches:1

F0100406B 数据手册

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F0100406B  
3.3V 1.25Gbit/s Transimpedance Amplifier  
General Description  
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo  
current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so  
on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the  
input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not  
always be achieved according to the employed PD and package, the assembling design, and  
other technical experts. This is the major reason that there is no product lineup of packaged  
transimpedance amplifiers.  
Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to  
design the input capacitance carefully.  
Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an  
important point of the design, because very faint photo-current floes into the transimpedance  
amplifier. Therefore, in the assembly design of the interconnection between a PD and a  
transimpedance, noise should be taken into consideration.  
Recommendation  
SEI basically recommends The F08 series PD preamplifier modules for customers of the  
transimpedance amplifiers. In these modules, a transimpedace amplifier, a PD, and a noise filter  
circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically  
a fiber pigtail. The F08series lineups are the best choice for customers to using the F01series  
transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design  
issues and to shorten the development lead time.  
Noise Performance  
F0100406B based on GaAs MES FET’s shows excellent low-noise characteristics compared  
with IC’s based on the silicon bipolar process. Many transmission systems often demand  
superior signal-to –noise ratio, that is, high sensitivity; F0100406B is the best Choice for such  
applications.  
The differential circuit configuration in the output enable a complete differential operation to  
reduce common mode noise: simple single ended output operation is also available.  
Die-Chip Description  
F0100406B is shipped like the die-chip described above. The die thickness is typically 280um ±  
20um with the available pad size uncovered by a passivation film of 95um square.The material of  
the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.  

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