Datasheet > ESD562

ESD562

更新时间： 2024-04-09 19:01:49

品牌	Logo	应用领域
德州仪器 - TI		二极管
页数	文件大小	规格书
18页	1682K
描述
双通道双向 12V ESD 保护二极管

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ESD562 数据手册

ESD562

ZHCSUL9 –FEBRUARY 2024

www.ti.com.cn

5.6 Electrical Characteristics

At T_A= 25°C unless otherwise noted

PARAMETER

TEST CONDITIONS

I_IO< 50nA

MIN

TYP

MAX

UNIT

V_RWM

Reverse stand-off voltage

Leakage current at V_RWM

-12

I_LEAKAGE

V_IO= ±12V, I/O to GND

Breakdown Voltage, IO to GND and

GND to IO⁽¹⁾

Surge clamping voltage, t_p= 8/20µs⁽²⁾I_PP= ±3A, I/O to GND

V_BR

I_IO= ±1mA

13.2

TLP clamping voltage, t_p= 100ns⁽³⁾

I_PP= 16A (100ns TLP), I/O to GND

V_CLAMP

I_PP= 16A (100ns TLP), GND to

I/O

TLP clamping voltage, t_p= 100ns⁽³⁾

V_HOLD

C_Line

Holding Voltage, I/O to GND⁽⁴⁾

Line capacitance, IO to GND

TLP, IO to GND or GND to IO

V_IO= 0V, f = 1MHz

16.5

1.5

(1) V_BRis defined as the voltage obtained at 1mA when sweeping the voltage up, before the devices latches into the snapback state

English Data Sheet: SLVSHP1

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