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ES2AAQ PDF预览

ES2AAQ

更新时间: 2024-03-03 10:08:02
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 249K
描述
SMA

ES2AAQ 数据手册

 浏览型号ES2AAQ的Datasheet PDF文件第2页浏览型号ES2AAQ的Datasheet PDF文件第3页浏览型号ES2AAQ的Datasheet PDF文件第4页 
RoHS  
ES2AAQ THRU ES2JAQ  
COMPLIANT  
Surface Mount Super Fast Recovery Rectifier  
Features  
● Low profile package  
● Ideal for automated placement  
● Glass passivated chip junction  
● High forward surge capability  
● Super Fast reverse recovery time  
● Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
● Part no. with suffix “Q” means AEC-Q101 qualified  
Typical Applications  
For use in high frequency rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer,  
automotive and telecommunication.  
Mechanical Data  
ackage: DO-214AC (SMA)  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
ES2AAQ ES2BAQ ES2CAQ ES2DAQ ES2FAQ ES2GAQES2HAQ ES2JAQ  
PARAMETER  
SYMBOL UNIT  
ES2AA  
50  
ES2BA  
100  
ES2CA  
150  
ES2DA ES2FA ES2GA ES2HA  
ES2JA  
600  
Device marking code  
VRRM  
VRMS  
VDC  
IO  
V
V
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
Repetitive peak reverse voltage  
Maximum RMS Voltage  
35  
70  
105  
420  
V
50  
100  
150  
600  
Maximum DC blocking Voltage  
Average rectified output current  
@60Hz sine wave, Resistance load, TL (Fig.1)  
A
2.0  
50  
Surge(non-repetitive)forward current  
@60Hz Half-sine wave,1 cycle, Ta=25℃  
IFSM  
Tstg  
TJ  
A
-55~+175  
-55~+175  
Storage temperature  
Junction temperature  
Ta=25Unless otherwise specified)  
Electrical Characteristics  
TEST  
CONDITIONS  
ES2AAQ ES2BAQ ES2CAQ ES2DAQ ES2FAQ ES2GAQ ES2HAQ ES2JAQ  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous  
forward voltage drop per diode  
VF  
TRR  
CJ  
V
IFM=2.0A  
0.95  
30  
1.3  
1.7  
Maximum reverse recovery  
time  
IF=0.5A,IR=1.0A,  
Irr=0.25A  
ns  
35  
Typical junction capacitance  
pF VR=4V,f=1MHz  
25  
20  
Ta=25℃  
μA  
5
Maximum DC reverse current  
at rated DC blocking voltage  
per diode@ VRM=VRRM  
IRRM  
Ta=125℃  
100  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S3365  
Rev.1.3,27-Jul-23  
www.21yangjie.com  

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