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ES1G

更新时间: 2023-12-06 20:07:54
品牌 Logo 应用领域
捷捷微 - JJM 超快恢复二极管
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描述
超快恢复二极管

ES1G 数据手册

 浏览型号ES1G的Datasheet PDF文件第1页浏览型号ES1G的Datasheet PDF文件第2页浏览型号ES1G的Datasheet PDF文件第3页 
ES1A~ES1G  
JieJie Microelectronics CO. , Ltd  
CHARACTERITICS CURVE  
FIG.1: Typical forward characteristics (25)  
FIG.2: Typical reverse characteristics  
100 Instantaneous reverse current (μA)  
10 Instantaneous forward current (A)  
Tj=150℃  
10  
50V~200V  
400V  
1.0  
0.1  
1.0  
0.1  
Tj=25℃  
80 100  
Forward voltage (V)  
Percentage of peak reverse voltage (%)  
0.01  
0.01  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
FIG.3: Maximum non-repetitive peak forward surge  
current  
FIG.4: Forward current derating curve  
Average forward current (A)  
Peak forward surge current (A)  
1.5  
1.0  
30  
8.3ms Single Half Sine-Wave  
JEDEC METHOD  
25  
20  
15  
10  
0.5  
0
5
Lead temperature ()  
Number of cycles at 60Hz  
0
1
10  
100  
0
50  
100  
150  
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu  
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without  
consideration for such information nor use beyond it.  
Information mentioned in this document is subject to change without notice, apart from that when an  
agreement is signed, Jiangsu JieJie complies with the agreement.  
Products and information provided in this document have no infringement of patents. Jiangsu JieJie  
assumes no responsibility for any infringement of other rights of third parties which may result from the  
use of such products and information.  
This document is the 3.1st version which is made in 20-May-2021. This document supersedes and  
replaces all information previously supplied.  
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.  
Copyright©2021 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.  
TEL:+86-513-83639777  
-4 / 4-  
http://www.jjwdz.com  

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