Datasheet > EPA120A

EPA120A

更新时间： 2024-02-09 13:55:39

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	56K
描述
High Efficiency Heterojunction Power FET

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技术参数
数据手册

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EPA120A 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8504.50.80.00	风险等级：	5.82
滤波器类型：	DATA LINE FILTER	高度：	3.92 mm
长度：	10.045 mm	安装类型：	SURFACE MOUNT
功能数量：	4	物理尺寸：	L0.41XB0.28XH0.16 (inch)
额定电流：	1 A	宽度：	6.86 mm
Base Number Matches：	1

EPA120A 数据手册

Excelics EPA120A/EPA120AV

DATA SHEET

High Efficiency Heterojunction Power FET

+29.5dBm TYPICAL OUTPUT POWER

9.5dB TYPICAL POWER GAIN FOR EPA120A AND

10.5dB FOR EPA120AV AT 18GHz

0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

Chip Thickness: 75 ± 20 microns

All Dimensions In Microns

: Via Hole

EPA120AV WITH VIA HOLE SOURCE GROUNDING

Idss SORTED IN 30mA PER BIN RANGE

No Via Hole For EPA120A

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

UNIT

EPA120A

EPA120AV

MIN

TYP

MAX

MIN

TYP

29.5

12.5

10.5

MAX

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

f=12GHz

f=18GHz

28.0

29.5

28.0

dBm

P_1dB

G_1dB

PAE

29.5

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

10.0

12.0

10.5

9.5

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

360

380

-1.0

-15

-14

360

380

-1.0

-15

-14

Saturated Drain Current Vds=3V, Vgs=0V

220

240

500

-2.5

220

240

500

-2.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=3.5mA

Drain Breakdown Voltage Igd=1.2mA

Source Breakdown Voltage Igs=1.2mA

Thermal Resistance (Au-Sn Eutectic Attach)

-11

-7

-11

-7

BVgd

BVgs

Rth

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

EPA120A

EPA120AV

ABSOLUTE¹

CONTINUOUS²

ABSOLUTE¹

CONTINUOUS²

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

Vds

Vgs

Ids

-8V

-3V

-8V

-3V

Idss

385mA

10mA

Idss

10mA

Forward Gate Current

Input Power

60mA

27dBm

60mA

27dBm

Igsf

@ 3dB

Compression

Channel Temperature

Storage Temperature

Total Power Dissipation

175^oC

150^oC

175^oC

150^oC

Tch

Tstg

-65/175^oC

-65/150^oC

-65/175^oC

-65/150^oC

3.7W

3.1W

5.0W

4.2W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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