EN29LV800AT-55RTC

更新时间： 2024-09-29 05:10:27

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
41页	591K
描述
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV800AT-55RTC 数据手册

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EN29LV800A

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

Additionally, temporary Sector Unprotect

allows code changes in previously locked

sectors.

• Single power supply operation

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors.

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

• Manufactured on 0.18 µm triple-metal double

poly triple-well CMOS Flash Technology

• JEDEC Standard Embedded Erase and

Program Algorithms

• JEDEC standard DATA# polling and toggle

bits feature

• High performance

- Access times as fast as 55 ns

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

• Low Vcc write inhibit < 2.5V

• Minimum 1,000K endurance cycle

• Package Options

• Flexible Sector Architecture:

- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,

and fifteen 64-Kbyte sectors (byte mode)

- One 8-Kword, two 4-Kword, one 16-Kword

and fifteen 32-Kword sectors (word mode)

- 48-pin TSOP (Type 1)

- 48-ball 6mm x 8mm FBGA

• Sector protection:

• Commercial and industrial temperature

Range

- Hardware locking of sectors to prevent

program or erase operations within individual

sectors

GENERAL DESCRIPTION

The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs.

The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 55ns

to eliminate the need for WAIT statements in high-performance microprocessor systems.

The EN29LV800A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single

Sector or full chip erase operation, where each sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain

a minimum of 1,000K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2005/01/10

12 3 4 5 6 7...41

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与EN29LV800AT-55RTC相关器件

型号	品牌	获取价格	描述	数据表
EN29LV800AT-55RTCP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-55RTI	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-55RTIP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-70BC	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-70BCP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-70BI	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-70BIP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-70TC	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-70TCP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800AT-70TI	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0

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