Datasheet > EN29LV800B70RTP

EN29LV800B70RTP

更新时间： 2024-09-29 06:57:15

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
43页	240K
描述
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV800B70RTP 数据手册

EN29LV800

da0.

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

Additionally, temporary Sector Group

• Single power supply operation

Unprotect allows code changes in previously

- Full voltage range: 2.7-3.6 volt read and write

locked sectors.

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors.

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

• Manufactured on 0.28 µm process technology

• JEDEC Standard program and erase

commands

• High performance

- Access times as fast as 70 ns

• JEDEC standard

bits feature

polling and toggle

DATA

• Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

• Flexible Sector Architecture:

- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

- One 8 Kword, two 4 Kword, one 16 Kword

and fifteen 32 Kword sectors (word mode)

- Supports full chip erase

• 0.28 µm double-metal double-poly

triple-well CMOS Flash Technology

• Low Vcc write inhibit < 2.5V

• >100K program/erase endurance cycle

• 48-pin TSOP (Type 1)

- Individual sector erase supported

- Sector protection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

• Commercial Temperature Range

GENERAL DESCRIPTION

The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs.

The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV800 has separate Output Enable (

), Chip Enable (

), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of

100K program/erase cycles on each Sector.

4800 Great America Parkway, Suite 202

Santa Clara, CA 95054

Tel: 408-235-8680

Fax: 408-235-8685

Rev 0.4 Release Date: 2002/01/29

12 3 4 5 6 7...43

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与EN29LV800B70RTP相关器件

型号	品牌	获取价格	描述	数据表
EN29LV800B90S	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800B90SI	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800B90SIP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800B90SP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800B90T	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800B90TI	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800B90TIP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800B90TP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800BB-55RBC	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0
EN29LV800BB-55RBCP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0

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