Datasheet > EN29LV320A

EN29LV320A

更新时间： 2024-02-23 13:55:41

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
49页	411K
描述
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV320A 数据手册

EN29LV320A

32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

• Single power supply operation

- Full voltage range: 2.7 to 3.6 volts read and

write operations

• Standard DATA# polling and toggle bits

feature

• Unlock Bypass Program command supported

• High performance

- Access times as fast as 70 ns

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• Low power consumption (typical values at 5

MHz)

- 9 mA typical active read current

- 20 mA typical program/erase current

- Less than 1 μA current in standby or automatic

sleep mode.

• Support JEDEC Common Flash Interface

(CFI).

• Low Vcc write inhibit < 2.5V

• Minimum 100K program/erase endurance

cycles.

• Flexible Sector Architecture:

- Eight 8-Kbyte sectors, sixty-three 64k-byte

sectors.

- 8-Kbyte sectors for Top or Bottom boot.

- Sector/Sector Group protection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

• RESET# hardware reset pin

- Hardware method to reset the device to read

mode.

• WP#/ACC input pin

- Write Protect (WP#) function allows

protection of outermost two boot sectors,

regardless of sector protect status

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors.

- Acceleration (ACC) function provides

accelerated program times

• High performance program/erase speed

- Word program time: 8µs typical

- Sector erase time: 500ms typical

- Chip erase time: 70s typical

• Package Options

- 48-pin TSOP (Type 1)

- 48 ball 6mm x 8mm FBGA

• Commercial and Industrial Temperature

Range.

• JEDEC Standard compatible

GENERAL DESCRIPTION

The EN29LV320A is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs. The

EN29LV320A features 3.0V voltage read and write operation, with access times as fast as 70ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV320A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full Chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2007/07/17

12 3 4 5 6 7...49

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与EN29LV320A相关器件

型号	品牌	获取价格	描述	数据表
EN29LV320AB-70B	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV320AB-70BC	EON	获取价格	Flash Memory
EN29LV320AB-70BI	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV320AB-70BIP	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV320AB-70BP	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV320AB-70T	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV320AB-70TI	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV320AB-70TIP	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV320AB-70TP	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV320AB-90B	EON	获取价格	32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.

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