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EN29LV320AB-70TIP PDF预览

EN29LV320AB-70TIP

更新时间: 2024-01-07 06:55:23
品牌 Logo 应用领域
EON 闪存存储
页数 文件大小 规格书
49页 411K
描述
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EN29LV320AB-70TIP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.81
Is Samacsys:NBase Number Matches:1

EN29LV320AB-70TIP 数据手册

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EN29LV320A  
EN29LV320A  
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
Single power supply operation  
- Full voltage range: 2.7 to 3.6 volts read and  
write operations  
Standard DATA# polling and toggle bits  
feature  
Unlock Bypass Program command supported  
High performance  
- Access times as fast as 70 ns  
Erase Suspend / Resume modes:  
Read and program another Sector during  
Erase Suspend Mode  
Low power consumption (typical values at 5  
MHz)  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- Less than 1 μA current in standby or automatic  
sleep mode.  
Support JEDEC Common Flash Interface  
(CFI).  
Low Vcc write inhibit < 2.5V  
Minimum 100K program/erase endurance  
cycles.  
Flexible Sector Architecture:  
- Eight 8-Kbyte sectors, sixty-three 64k-byte  
sectors.  
- 8-Kbyte sectors for Top or Bottom boot.  
- Sector/Sector Group protection:  
Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
RESET# hardware reset pin  
- Hardware method to reset the device to read  
mode.  
WP#/ACC input pin  
- Write Protect (WP#) function allows  
protection of outermost two boot sectors,  
regardless of sector protect status  
Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
locked sectors.  
- Acceleration (ACC) function provides  
accelerated program times  
High performance program/erase speed  
- Word program time: 8µs typical  
- Sector erase time: 500ms typical  
- Chip erase time: 70s typical  
Package Options  
- 48-pin TSOP (Type 1)  
- 48 ball 6mm x 8mm FBGA  
Commercial and Industrial Temperature  
Range.  
JEDEC Standard compatible  
GENERAL DESCRIPTION  
The EN29LV320A is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs. The  
EN29LV320A features 3.0V voltage read and write operation, with access times as fast as 70ns to  
eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV320A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single Sector  
or full Chip erase operation, where each Sector can be individually protected against program/erase  
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K  
program/erase cycles on each Sector.  
.
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. B, Issue Date: 2007/07/17  

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