Datasheet > EM642FU16BT-55L

EM642FU16BT-55L

更新时间： 2025-09-07 06:56:59

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	427K
描述
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM

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EM642FU16BT-55L 数据手册

EM620FV8B Series

Low Power, 256Kx8 SRAM

Document Title

256K x8 bit Low Power and Low Voltage Full CMOS Static RAM

Revision History

RevisionNo.

History

Draft Date

Remark

0.0

Initial Draft

June 7, 2007

0.1

0.2

0.3

0.1 Revision

0.2 Revision

0.3 Revision

Remove BYTE option information

Remove UB, LB information

June 15, 2007

June 21, 2007

July 2, 2007

Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns),

tOE-55(30ns to 25ns), tWP-55(45ns to 40ns),

tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns),

ICC(2mA to 3mA), ICC1(2mA to 3mA)

0.4

0.4 Revision

V_IHlevel change from 2.0V to 2.2V

Aug. 16, 2007

Emerging Memory & Logic Solutions Inc.

4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719

Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com

The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your

questions about device. If you have any questions, please contact the EMLSI office.

12 3 4 5 6 7...11

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