Datasheet > EM636165_06

EM636165_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
钰创 - ETRON		动态存储器
页数	文件大小	规格书
75页	789K
描述
1Mega x 16 Synchronous DRAM (SDRAM)

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EM636165_06 数据手册

EtronTech

EM636165

1M x 16 SDRAM

Operation Mode

Fully synchronous operations are performed to latch the commands at the positive edges of CLK.

Table 2 shows the truth table for the operation commands.

Table 2. Truth Table (Note (1), (2) )

Command

State CKE_n-1CKE_nDQM⁽⁶⁾A11 A

CS# RAS# CAS# WE#

10 0-9

Idle⁽³⁾

Any

BankActivate

BankPrecharge

PrechargeAll

Any

Active⁽³⁾

Idle

Write

Write and AutoPrecharge

Read

Read and Autoprecharge

Mode Register Set

No-Operation

Any

Active⁽⁴⁾

Burst Stop

Device Deselect

AutoRefresh

Any

Idle

SelfRefresh Entry

SelfRefresh Exit

Idle

(SelfRefresh)

Clock Suspend Mode Entry

Power Down Mode Entry

Active

Any⁽⁵⁾

Clock Suspend Mode Exit

Power Down Mode Exit

Active

Any

(PowerDown)

Data Write/Output Enable

Data Mask/Output Disable

Active

Note:

1. V=Valid X=Don't Care L=Low level H=High level

2. CKE_nsignal is input level when commands are provided.

CKE_n-1signal is input level one clock cycle before the commands are provided.

3. These are states of bank designated by BS signal.

4. Device state is 1, 2, 4, 8, and full page burst operation.

5. Power Down Mode can not enter in the burst operation.

When this command is asserted in the burst cycle, device state is clock suspend mode.

6. LDQM and UDQM

Preliminary

Rev. 2.7 Mar. 2006

1...3 4 567 8 9...75

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