Datasheet > EM1

EM1

更新时间： 2024-02-14 16:35:55

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	296K
描述
1.0A plug-in rectifier diode 400V DO-41 series

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技术参数
数据手册

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EM1 技术参数

生命周期：	Active	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.6
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-PALF-W2	元件数量：	1
端子数量：	2	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

EM1 数据手册

EM1Y - EM1C

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 100 - 1000V

CURRENT: 1.0 A

Features

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Freon,Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

Mechanical Data

Case: D O - 4 1 Molded Plastic

DO-41

Min

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

Dim

Max

25.40

4.06

5.21

0.864

2.72

0.71

2.00

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

Characteristic

EM1Y EM1Z

Unit

EM1

400

EM1A EM1B EM1C

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

200

140

200

600

420

600

800

560

800

1000

V_RRM

V_RMS

V_DC

280

400

700

Maximum DC blocking voltage

Maximum average forw ard rectified current

100

1000

1.0

I_F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

I_FSM

45.0

0.97

8.3ms single half-sine-w ave

superimposed on rated load @T_J=125

Maximum instantaneous forw ard voltage

@ 1.0 A

V_F

Maximum reverse current

@T_A=25

5.0

50.0

I_R

at rated DC blocking voltage @T_A=100

Typical junction capacitance

Typical thermal resistance

(Note1)

(Note2)

C_J

R_θ

/ W

Operating junction temperature range

Storage temperature range

- 55---- +150

- 55---- + 150

T_J

T_STG

NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

2. Thermal resistance from junction to ambient.

1 of 2

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