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EL2004MIL

更新时间： 2024-02-20 16:24:30
品牌 Logo 应用领域
ELANTEC /
页数 文件大小 规格书
16页 274K
描述
350 MHz FET Buffer

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EL2004MIL 技术参数

生命周期：Transferred零件包装代码：QLCC
针数：52Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.75Is Samacsys：N
放大器类型：BUFFER标称带宽 (3dB)：200 MHz
25C 时的最大偏置电流 (IIB)：0.0025 µA最大输入失调电压：35000 µV
JESD-30 代码：S-CQCC-N52JESD-609代码：e0
负供电电压上限：-20 V标称负供电电压 (Vsup)：-15 V
功能数量：1端子数量：52
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：QCCN
封装等效代码：LCC52,.75SQ封装形状：SQUARE
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
电源：+-5/+-15 V认证状态：Not Qualified
筛选级别：MIL-STD-883 Class B (Modified)最小摆率：2000 V/us
标称压摆率：1200 V/us子类别：Buffer Amplifier
最大压摆率：24 mA供电电压上限：20 V
标称供电电压 (Vsup)：15 V表面贴装：YES
技术：BIPOLAR温度等级：MILITARY
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子节距：1.27 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

EL2004MIL 数据手册

 浏览型号EL2004MIL的Datasheet PDF文件第4页浏览型号EL2004MIL的Datasheet PDF文件第5页浏览型号EL2004MIL的Datasheet PDF文件第6页浏览型号EL2004MIL的Datasheet PDF文件第8页浏览型号EL2004MIL的Datasheet PDF文件第9页浏览型号EL2004MIL的Datasheet PDF文件第10页 
EL2004/EL2004C  
350 MHz FET Buffer  
Input Bias Current vs  
Temperature  
Applications Information  
The EL2004 is one member of a family of high  
performance buffers manufactured by Elantec.  
The 2004 is optimized for speed while others offer  
choices of input DC parameters or output drive  
or cost. The following table illustrates those  
members available at the time of this printing.  
Consult the factory for the latest capabilities in  
this developing line.  
Elantec’s Buffer Family  
Slew  
Rate  
V/ms  
Input  
Current  
(Warm)  
Peak Rise  
Bandwidth  
MHz  
Ý
Part  
I
Time  
ns  
OUT  
mA  
ELH0002  
200  
50  
6 mA  
2.5 nA  
2.5 nA  
0.1 nA  
400  
250  
250  
250  
7
ELH0033 1500  
100  
350  
140  
2.9  
1.0  
2.5  
EL2004  
EL2005  
2500  
1500  
Recommended Layout Precautions  
The very high-speed performance of the EL2004  
can only be realized by taking certain precau-  
tions in circuit layout and power supply decou-  
pling. Low inductance ceramic chip or disc power  
supply decoupling capacitors of 0.1 mF or more  
should be connected with the shortest practical  
lead lengths between the device supply leads and  
a ground plane. In addition, it can be helpful to  
parallel these with 4.7 mF electrolytics (Tanta-  
lum preferred). Failure to follow these precau-  
tions can result in oscillation.  
2004–9  
In applications such as sample and hold circuits  
where it is important to maintain low input bias  
current over input voltage range, the EL2005  
High Accuracy Fast Buffer is recommended.  
The input capacitance of EL2004 comprises the  
FET device gate-to-source capacitance (which is  
a function of input voltage) and stray capaci-  
tance to the case. Effective input capacitance can  
be minimized by connecting the case to the out-  
put since it is electrically isolated. Or, for reduced  
radiation, the case may be grounded. The AC  
characteristics specified in this data sheet were  
obtained with the case floating.  
Circuit Operation  
The EL2004 is effectively an ideal unity gain am-  
plifier with almost infinite input impedance and  
about 6X output impedance.  
Input Characteristics  
The input impedance of a junction FET is a  
strong function of temperature and input volt-  
12  
age. Nominal input resistance of EL2004 is 10  
at 25 C junction, but as I doubles every 11 C in  
§
§
Offset Voltage Adjustment  
The EL2004’s offset voltages have been actively  
B
the JFET, the input resistance falls. During  
warm-up, self-heating raises the junction temper-  
g
laser trimmed at 15V supplies to meet specified  
ature up to 60 C or more (without heatsink) so  
operating I will be much higher than the data  
B
§
limits when the offset adjust pin is shorted to the  
offset preset pin. If external offset null is re-  
quired, the offset adjust pin should be connected  
to a 200X trim pot connected to the negative sup-  
ply.  
sheet 25 C specification.  
§
Another factor which can increase bias current is  
input voltage. If the input voltage is more than  
20V below the positive supply, the input current  
rises exponentially. (See Curve.)  
7
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