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EL2004G PDF预览

EL2004G

更新时间: 2024-02-14 06:21:52
品牌 Logo 应用领域
ELANTEC 缓冲放大器放大器电路局域网
页数 文件大小 规格书
16页 274K
描述
350 MHz FET Buffer

EL2004G 技术参数

生命周期:Transferred零件包装代码:QLCC
针数:52Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.75Is Samacsys:N
放大器类型:BUFFER标称带宽 (3dB):200 MHz
25C 时的最大偏置电流 (IIB):0.0025 µA最大输入失调电压:35000 µV
JESD-30 代码:S-CQCC-N52JESD-609代码:e0
负供电电压上限:-20 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:52
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QCCN
封装等效代码:LCC52,.75SQ封装形状:SQUARE
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-5/+-15 V认证状态:Not Qualified
筛选级别:MIL-STD-883 Class B (Modified)最小摆率:2000 V/us
标称压摆率:1200 V/us子类别:Buffer Amplifier
最大压摆率:24 mA供电电压上限:20 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EL2004G 数据手册

 浏览型号EL2004G的Datasheet PDF文件第1页浏览型号EL2004G的Datasheet PDF文件第2页浏览型号EL2004G的Datasheet PDF文件第4页浏览型号EL2004G的Datasheet PDF文件第5页浏览型号EL2004G的Datasheet PDF文件第6页浏览型号EL2004G的Datasheet PDF文件第7页 
EL2004/EL2004C  
350 MHz FET Buffer  
g
S
5V DC Electrical Characteristics  
k
k
T
e
e
e
0V, R 50X unless otherwise specified  
L
g
V
5V, T  
T
, V  
MAX IN  
MIN  
A
EL2004  
EL2004C  
Parameter  
Description  
Test Conditions  
Units  
Test  
Test  
Min Typ Max  
Min Typ Max  
Level  
Level  
s
s
e
e
V
Output Offset  
Voltage  
R
R
100 kX, T  
100 kX  
25 C  
§
10  
30  
35  
I
I
I
I
I
10  
30  
35  
I
III  
II  
II  
I
mV  
mV  
V/V  
V/V  
X
OS  
S
J
S
e
g
g
A
Voltage Gain  
V
V
T
V
1V, R  
1 kX 0.90  
0.95  
0.88  
1.0  
0.95  
0.90  
0.80  
0.95  
0.88  
1.0  
0.95  
V
IN  
IN  
L
e
1V  
0.80  
8
11  
10  
10  
11  
e
e
g
R
R
Input Impedance  
25 C, V  
§
IN  
1V  
10  
10  
10  
IN  
J
e
g
Output  
1 V ,  
DC  
OUT  
IN  
4
8
I
I
4
10  
II  
X
e
50X to Infinity  
Impedance  
DR  
L
e
IN  
g
4V  
V
I
Output Voltage  
Swing  
V
O
g
g
g
g
2.9  
2.0  
2.9  
2.0  
III  
V
e
e
e
Input Current  
T
T
T
V
25 C (Note 2)  
§
250  
2.5  
10  
I
IV  
I
500  
5
I
pA  
nA  
nA  
IN  
J
25 C (Note 3)  
§
IV  
III  
A
J
e
T
T
20  
A
MAX  
e
e
g g  
5V to 15V  
PSRR  
Power Supply  
S
60  
17.5  
V
I
60  
17.5  
V
dB  
Rejection Ratio  
R
1 kX  
L
L
e
I
S
Supply Current  
R
1 kX  
20  
20  
II  
mA  
Note 1: When operating at elevated temperatures the power dissipation of the EL2004 must be limited to the values shown in the  
typical performance curve ‘‘Maximum Power Dissipation vs Temperature’’. Junction to case thermal resistance is 31 C/W  
§
when dissipation is spread among the transistors in a normal AC steady-state condition. In special conditions where heat is  
concentrated in one output device, junction temperature should be calculated using a thermal resistance of 70 C/W.  
§
Note 2: Specification is at 25 C junction temperature due to requirements of high-speed automatic testing. Actual values at operating  
§
e
g
25 C. When supply voltages are 15V, no-load operating junction temperatures  
temperatures will exceed the value at T  
§
J
may rise 40 C to 60 C above ambient and more under load conditions. Accordingly, V may change one to several mV, and  
§
§
OS  
will change significantly during warm-up. Refer to I vs Temperature graph for expected values.  
I
IN  
IN  
Note 3: Measured in still air seven minutes after application of power. See graph of Input Current During Warm-up for further  
information.  
b
Note 4: Bandwidth is calculated from the rise time. The EL2004 has a single pole gain and phase response up to the 3 dB  
frequency.  
e a  
e a  
b
Note 5: Slew rate is measured between V  
Note 6: Slew rate is measured between V  
2.5V and 2.5V for this test.  
OUT  
OUT  
k
1V and 1V for this test. Pulse repetition rate is 50 MHz.  
b
g
V
S
15V AC Electrical Characteristics  
e
e
e
e
50X, T 25 C unless otherwise specified  
J
g
15V, R  
1 kX, R  
§
L
S
EL2004  
EL2004C  
Parameter  
Description  
Test Conditions  
Units  
Test  
Test  
Min Typ Max  
Min Typ Max  
Level  
Level  
BW  
Bandwidth  
(Note 4)  
200  
140  
350  
200  
6
I
I
200  
140  
350  
200  
6
I
I
MHz  
MHz  
ns  
e
R
50X  
L
e
e
3 ns  
t
Settling Time to 1% DV  
1V, t  
r
V
V
V
V
s
IN  
C
Input Capacitance  
3
3
pF  
in  
3

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