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EIB1414-4P PDF预览

EIB1414-4P

更新时间: 2022-12-18 00:31:44
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
1页 47K
描述
14.0-14.5GHz, 4W Internally Matched Power FET

EIB1414-4P 数据手册

  
Excelics  
EIA/EIB1414-4P  
Not recommended for new designs. Contact factory. Effective 03/2003  
14.0-14.5GHz, 4W Internally Matched Power FET  
·
14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT  
IMPEDANCE MATCHED TO 50 OHM  
·
·
·
EIA FEATURES HIGH PAE( 27% TYPICAL)  
EIB FEATURES HIGH IP3(49dBm TYPICAL)  
+36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR  
EIA/EIB  
·
·
8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB  
NON-HERMETIC METAL FLANGE PACKAGE  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
EIA1414-4P  
TYP  
EIB1414-4P  
TYP  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
UNIT  
dBm  
dB  
MIN  
MAX  
MIN  
MAX  
Output Power at 1dB Compression f=14.0-14.5GHz  
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)  
35.5  
36.5  
35  
35.5  
P1dB  
G1dB  
PAE  
Gain at 1dB Compression  
f=14.0-14.5GHz  
7.5  
8.5  
27  
6.5  
7.5  
22  
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)  
Power Added Efficiency at 1dB compression  
f=14.0-14.5GHz  
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)  
%
Drain Current at 1dB Compression  
1760  
43  
1700  
49*  
mA  
Id1dB  
IP3  
Output 3rd Order Intercept Point  
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)  
f=14.0-14.5GHz  
dBm  
Saturated Drain Current Vds=3V, Vgs=0V  
2200  
-13  
2880  
3000  
-1.0  
-15  
3400  
-2.5  
2200  
2720  
1400  
-2.0  
-15  
3400  
-3.5  
mA  
mS  
V
Idss  
Gm  
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
Vds=3V, Ids=24mA  
Vp  
Drain Breakdown Voltage Igd=9.6mA  
V
BVgd  
Thermal Resistance (Au-Sn Eutectic Attach)  
4.5  
4.5  
oC/W  
Rth  
*Typical –45dBc IM3 at Pout=26dBm/Tone  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
ABSOLUTE1  
CONTINUOUS2  
Vds  
Vgs  
Ids  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
12V  
-8V  
8V  
-3V  
Idss  
3120mA  
60mA  
Igsf  
Pin  
Tch  
Tstg  
Pt  
Forward Gate Current  
Input Power  
360mA  
35dBm  
175oC  
-65/175oC  
30W  
@ 3dB Compression  
150oC  
-65/150oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
25W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085  
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com  

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