Datasheet > EFC120

EFC120

更新时间： 2024-01-24 16:08:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	27K
描述
Low Distortion GaAs Power FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EFC120 数据手册

Excelics

EFC120B-100F

DATA SHEET

Low Distortion GaAs Power FET

10 Rad.

HERMETIC 100mil CERAMIC FLANGE PACKAGE

+28.0dBm TYPICAL OUTPUT POWER

HIGH BVgd FOR 10V BIAS

9.0dB TYPICAL POWER GAIN AT 8GHz

0.3 X 1200 MICRON RECESSED “MUSHROOM”

GATE

63 Dia.

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

256 TYP.

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

All Dimensions In mils

SYMBOLS

P_1dB

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=10V, Ids=50% Idss

Gain at 1dB Compression

Vds=10V, Ids=50% Idss

Gain at 1dB Compression

Vds=10V, Ids=50% Idss

f = 8GHz

28.0

dBm

f = 12GHz

f = 8GHz

f = 12GHz

26.0

4.0

28.0

9.0

G_1dB

PAE

6.0

f = 12GHz

Saturated Drain Current Vds=3V, Vgs=0V

160

100

260

140

-2.5

-20

360

-4.0

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=3.0mA

Drain Breakdown Voltage Igd=1.2mA

Source Breakdown Voltage Igs=1.2mA

Thermal Resistance

-15

-10

BVgd

BVgs

Rth

-17

43*

^oC/W

*Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

14V

CONTINUOUS²

10V

Vds

Vgs

Ids

-8V

-4.5V

Idss

270mA

5mA

Forward Gate Current

Input Power

30mA

Igsf

Tch

Tstg

26dBm

175^oC

-65/175^oC

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

3.2W

2.7W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

中文翻译

下载PDF

与EFC120相关器件

型号	品牌	获取价格	描述	数据表
EFC120B	EXCELICS	获取价格	Low Distortion GaAs Power FET
EFC120B-100F	ETC	获取价格	Low Distortion GaAs Power FET
EFC16A	CRYDOM	获取价格	Silicon Controlled Rectifier, 200V V(RRM), 3 Element
EFC16A-F	ETC	获取价格	THYRISTOR MODULE\|3-PH FULL-WAVE\|FULLY CNTLD\|200V V(RRM)
EFC16A-SE	ETC	获取价格	THYRISTOR MODULE\|3-PH FULL-WAVE\|FULLY CNTLD\|200V V(RRM)
EFC16B	ETC	获取价格	THYRISTOR MODULE\|3-PH FULL-WAVE\|FULLY CNTLD\|400V V(RRM)
EFC16B-F	CRYDOM	获取价格	Silicon Controlled Rectifier, 400V V(RRM), 3 Element
EFC16B-SE	ETC	获取价格	THYRISTOR MODULE\|3-PH FULL-WAVE\|FULLY CNTLD\|400V V(RRM)
EFC16C	ETC	获取价格	THYRISTOR MODULE\|3-PH FULL-WAVE\|FULLY CNTLD\|600V V(RRM)
EFC16C-F	CRYDOM	获取价格	Silicon Controlled Rectifier, 600V V(RRM), 3 Element