Datasheet > EFC120B

EFC120B

更新时间： 2024-09-28 06:56:11

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	28K
描述
Low Distortion GaAs Power FET

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EFC120B 数据手册

EFC120B

Excelics

PRELIMINARY DATA SHEET

Low Distortion GaAs Power FET

550

•

+28.0dBm TYPICAL OUTPUT POWER

9.5dB TYPICAL POWER GAIN AT 12GHz

HIGH BVgd FOR 10V BIAS

0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

156

350

100

•

Idss SORTED IN 20mA PER BIN RANGE

120

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

P_1dB

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=10V, Ids=50% Idss

Gain at 1dB Compression

Vds=10V, Ids=50% Idss

f=12GHz

26.0

28.0

9.5

dBm

f=18GHz

f=12GHz

f=18GHz

7.5

G_1dB

PAE

7.0

Power Added Efficiency at 1dB Compression

Vds=10V, Ids=50% Idss

f=12GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

160

100

260

140

-2.5

-20

-17

360

-4.0

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=3.0 mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=1.2mA

Source Breakdown Voltage Igs=1.2mA

Thermal Resistance (Au-Sn Eutectic Attach)

-15

-10

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

14V

CONTINUOUS²

10V

Vds

Vgs

Ids

-8V

-4.5V

Idss

285mA

5mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

30mA

26dBm

175^oC

-65/175^oC

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

3.4W

2.8W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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