Datasheet > EDI88512CA-20RJIG

EDI88512CA-20RJIG

更新时间： 2023-01-02 15:52:38

品牌	Logo	应用领域
玛居礼 - MERCURY		静态存储器光电二极管
页数	文件大小	规格书
9页	837K
描述
Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, REVOLUTIONARY, SOJ-36

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中文翻译

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数据手册

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EDI88512CA-XMXG

WPS512K8X-XRJXG

512Kx8 Plastic Monolithic SRAM CMOS

WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to

capitalize on the cost advantage of using a plastic component while

not sacriﬁcing all of the reliability available in a full military device.

FEATURES

 512Kx8 bit CMOS Static

 Random Access Memory

Extended temperature testing is performed with the test patterns

developed for use on WEDC’s fully compliant 512Kx8 SRAMs.

WEDC fully characterizes devices to determine the proper test

patterns for testing at temperature extremes. This is critical because

the operating characteristics of device change when it is operated

beyond the commercial guarantee a device that operates reliably

in the ﬁeld at temperature extremes. Users of WEDC’s ruggedized

plastic beneﬁt from WEDC’s extensive experience in characterizing

SRAMs for use in military systems.

• Access Times of 17, 20, 25ns

• Data Retention Function (LPA version)

• Extended Temperature Testing

• Data Retention Functionality Testing

 36 lead JEDEC Approved Revolutionary Pinout

• Plastic SOJ (Package 319)

 Single +5V (±10%) Supply Operation

 RoHS compliant

WEDC ensures Low Power devices will retain data in Data

Retention mode by characterizing the devices to determine the

appropriate test conditions. This is crucial for systems operating

at -40°C or below and using dense memories such as 512Kx8s.

WEDC’s ruggedized plastic SOJ is footprint compatible with

WEDC’s full military ceramic 36 pin SOJ.

FIGURE 1 – PIN CONFIGURATION

TOP VIEW

PIN Description

I/O0-7

A^0-18

WE#

CS#

OE#

V^CC

Data Inputs/Outputs

Address Inputs

Write Enables

Chip Selects

36 NC

35 A18

34 A17

33 A16

32 A15

31 OE#

30 I/O7

29 I/O6

28 V_SS

27 V_CC

26 I/O5

25 I/O4

24 A14

23 A13

22 A12

21 A11

20 A10

19 NC

Output Enable

Power (+5V ±10%)

Ground

VSS

Not Connected

CS#

I/O0

I/O1

V_CC

BLOCK DIAGRAM

36pin

V_SS10

I/O2 11

I/O3 12

WE# 13

A5 14

Revolutionary

Memory Array

A6 15

A7 16

Address

Buffer

Address

Decoder

I/O

Circuits

AØ-18

I/OØ-7

A8 17

A9 18

WE#

CS#

OE#

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 11

Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

12 3 4 5 6 7...9

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与EDI88512CA-20RJIG相关器件

型号	品牌	获取价格	描述	数据表
EDI88512CA-20RJMG	MERCURY	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, REVOLUTIONARY, SOJ-36
EDI88512CA20TB	MERCURY	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA20TB	MICROSEMI	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA20TC	ETC	获取价格	x8 SRAM
EDI88512CA20TI	MERCURY	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA20TM	ETC	获取价格	x8 SRAM
EDI88512CA25B32B	MICROSEMI	获取价格	Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, DFP-32
EDI88512CA25B32C	MICROSEMI	获取价格	Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, DFP-32
EDI88512CA25B32I	MICROSEMI	获取价格	Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, DFP-32
EDI88512CA25B32M	ETC	获取价格	x8 SRAM

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