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EDI88512CA25MC PDF预览

EDI88512CA25MC

更新时间: 2023-02-26 15:35:34
品牌 Logo 应用领域
WEDC 静态存储器光电二极管
页数 文件大小 规格书
7页 287K
描述
Standard SRAM, 512KX8, 25ns, CMOS, PDSO36, PLASTIC, SOJ-36

EDI88512CA25MC 数据手册

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EDI88512CA-RP  
White Electronic Designs  
512Kx8 Plastic Monolithic SRAM CMOS  
WEDC's ruggedized plastic 512Kx8 SRAM that allows  
the user to capitalize on the cost advantage of using a  
plastic component while not sacricing all of the reliability  
available in a full military device.  
FEATURES  
512Kx8 bit CMOS Static  
Random Access Memory  
Extended temperature testing is performed with the test  
patterns developed for use on WEDC’s fully compliant  
512Kx8 SRAMs. WEDC fully characterizes devices  
to determine the proper test patterns for testing at  
temperature extremes. This is critical because the  
operating characteristics of device change when it is  
operated beyond the commercial guarantee a device that  
operates reliably in the eld at temperature extremes.  
Users of WEDC’s ruggedized plastic benet from WEDC’s  
extensive experience in characterizing SRAMs for use in  
military systems.  
• Access Times of 17, 20, 25ns  
• Data Retention Function (LPA version)  
• Extended Temperature Testing  
• Data Retention Functionality Testing  
36 lead JEDEC Approved Revolutionary Pinout  
• Plastic SOJ (Package 319)  
Single +5V (±10%) Supply Operation  
WEDC ensures Low Power devices will retain data in Data  
Retention mode by characterizing the devices to determine  
the appropriate test conditions. This is crucial for systems  
operating at -40°C or below and using dense memories  
such as 512Kx8s.  
WEDC’s ruggedized plastic SOJ is footprint compatible  
with WEDC’s full military ceramic 36 pin SOJ.  
FIG. 1 – PIN CONFIGURATION  
PIN Description  
TOP VIEW  
I/O0-7  
Data Inputs/Outputs  
Address Inputs  
Write Enables  
Chip Selects  
A0-18  
WE#  
CS#  
OE#  
VCC  
A0  
A1  
1
2
3
4
5
6
7
8
9
36 NC  
35 A18  
34 A17  
33 A16  
32 A15  
31 OE#  
30 I/O7  
29 I/O6  
28 VSS  
27 VCC  
26 I/O5  
25 I/O4  
24 A14  
23 A13  
22 A12  
21 A11  
20 A10  
19 NC  
A2  
A3  
A4  
CS#  
I/O0  
I/O1  
VCC  
Output Enable  
Power (+5V ±10%)  
Ground  
BLOCK DIAGRAM  
36pin  
VSS  
VSS 10  
I/O2 11  
I/O3 12  
WE# 13  
A5 14  
Revolutionary  
NC  
Not Connected  
Memory Array  
A6 15  
A7 16  
A8 17  
Address  
Buffer  
Address  
Decoder  
I/O  
A
Ø-18  
I/OØ-7  
Circuits  
A9 18  
WE#  
CS#  
OE#  
May 2004  
Rev. 6  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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