5秒后页面跳转
EDI816256LPA17N44B PDF预览

EDI816256LPA17N44B

更新时间: 2024-01-29 07:33:07
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
7页 269K
描述
Standard SRAM, 256KX16, 17ns, CMOS, CDSO44, CERAMIC, SOJ-44

EDI816256LPA17N44B 技术参数

生命周期:Obsolete包装说明:CERAMIC, SOJ-44
Reach Compliance Code:unknown风险等级:5.63
最长访问时间:17 nsJESD-30 代码:R-CDSO-J44
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX16封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
筛选级别:MIL-STD-883最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:J BEND
端子位置:DUALBase Number Matches:1

EDI816256LPA17N44B 数据手册

 浏览型号EDI816256LPA17N44B的Datasheet PDF文件第2页浏览型号EDI816256LPA17N44B的Datasheet PDF文件第3页浏览型号EDI816256LPA17N44B的Datasheet PDF文件第4页浏览型号EDI816256LPA17N44B的Datasheet PDF文件第5页浏览型号EDI816256LPA17N44B的Datasheet PDF文件第6页浏览型号EDI816256LPA17N44B的Datasheet PDF文件第7页 
EDI816256CA  
White Electronic Designs  
256Kx16 MONOLITHIC SRAM, SMD 5962-96795  
The EDI816256CAis a 4 megabit Monolithic CMOS Static  
RAM.  
FEATURES  
256Kx16 bit CMOS Static  
The EDI816256CA uses 16 common input and output  
lines and has an output enable pin which operates faster  
than address access time at read cycle. The device allows  
upper and lower byte access by use of the data byte control  
pins (LB#, UB#).  
Random Access Memory  
• Access Times of 17, 20, 25, 35ns  
• Data Retention Function (LPA version)  
• TTL Compatible Inputs and Outputs  
• Fully Static, No Clocks  
The devices are available in a fully hermetic 44 lead  
ceramic SOJ and a 44 lead Ceramic Flatpack. The Ceramic  
SOJ is pin for pin compatible with the commercially  
available plastic SOJ. This allows the user the luxury of  
designing a board that can be used for both the commercial  
and military market.  
44 lead JEDEC Approved Revolutionary Pinout  
• Ceramic SOJ (Package 322)  
• Ceramic Flatpack (Package 323)  
Single +5V ( 10ꢀ) Supply Operation  
ALow Power version with Data Retention (EDI816256LPA)  
is also available for battery backed applications. Military  
product is available compliant to Appendix A of MIL-PRF-  
38535.  
PIN CONFIGURATION  
TOP VIEW  
PIN DESCRIPTION  
A0-17  
LB# (I/O1-8)  
UB# (I/O9-16)  
I/O1-16  
CS#  
Address Inputs  
Lower-Byte Control (I/O1-8)  
Upper-Byte Control (I/O9-16)  
Data Input/Output  
Chip Select  
A0  
A1  
1
2
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A17  
A16  
A2  
3
A15  
A3  
A4  
4
5
6
OE#  
UB#  
LB#  
CS#  
I/O1  
I/O2  
I/O3  
I/O4  
VCC  
VSS  
I/O5  
I/O6  
I/O7  
I/O8  
WE#  
A5  
7
8
9
I/O16  
I/O15  
I/O14  
I/O13  
VSS  
OE#  
Output Enable  
WE#  
Write Enable  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
VCC  
+5.0V Power  
VSS  
Ground  
VCC  
I/O12  
I/O11  
I/O10  
I/O9  
NC  
A14  
A13  
A12  
A11  
NC  
No Connection  
A6  
A7  
A8  
A9  
A10  
August 2004  
Rev. 8  
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  

与EDI816256LPA17N44B相关器件

型号 品牌 获取价格 描述 数据表
EDI816256LPA20F44I WEDC

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, CDFP44, CERAMIC, DFP-44
EDI816256LPA20F44M WEDC

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, CDFP44, CERAMIC, DFP-44
EDI816256LPA20M44B WEDC

获取价格

SRAM,
EDI816256LPA20M44C WEDC

获取价格

SRAM,
EDI816256LPA20M44I ETC

获取价格

x16 SRAM
EDI816256LPA20M44IGA MICROSEMI

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, PDSO44
EDI816256LPA20M44M ETC

获取价格

x16 SRAM
EDI816256LPA20M44MGA MICROSEMI

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, PDSO44
EDI816256LPA20N44B WEDC

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, CDSO44, CERAMIC, SOJ-44
EDI816256LPA20N44M MICROSEMI

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, CDSO44, CERAMIC, SOJ-44