Datasheet > EDI7F434IMV120BNC

EDI7F434IMV120BNC

更新时间： 2024-09-22 23:50:03

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
3页	128K
描述
EEPROM

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中文翻译

获取价格

数据手册

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EDI7F434IMV120BNC 数据手册

EDI7F434IMV

4x1Megx32

Features

4x1Megx32 Flash Module

4 x 1 Meg x 32

TheEDI7F434IMVisorganizedasfour banksof1Megx32.

The module is based on Intel's 28F008B3 - 1Megx8 Flash

device in TSOP packages which are mounted on an FR4

substrate.

Based on Intel's 28F008B3 Flash Device

Fast Read Access Time - 120ns

Flexible Smart Voltage

2.7-3.6V Program Erase

2.7-3.6V Read Operation

12Vpp Fast Production Programming

Low Power Dissipation

The module offers access times between 120 and 150ns

allowingforoperationofhigh-speedmicroprocessorswithout

wait states.

30mA per Device Active Current

10µA per Device CMOS Standby Current

Typical Endurance >100,000 Cycles

Single 3.0 Volt -10% +20% Supply

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Range

Package

80 Pin SIMM (JEDEC)

Block Diagrams

EDI7F434IMV-BNC

4x1Megx32 80 pin SIMM

E3\

E2\

E1\

E0\

A0-A19

1Mx8

DQ0-DQ7

W0\

W1\

1Mx8

DQ8-DQ15

DQ16-DQ23

DQ24-DQ31

W2\

W3\

Electronic Designs Incorporated

• One Research Drive • Westborough, MA 01581USA • 508-366-5151 • FAX 508-836-4850 •

Electronic Designs Europe Ltd. • Shelley House, The Avenue • Lightwater, Surrey GU18 5RF

United Kingdom • 01276 472637 • FAX: 01276 473748

http://www.electronic-designs.com

EDI7F434IMV Rev. 0 9/97 ECO #9372

12 3

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