EC21QS10

更新时间： 2024-09-23 23:13:23

品牌	Logo	应用领域
NIEC		整流二极管肖特基二极管光电二极管瞄准线
页数	文件大小	规格书
6页	60K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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EC21QS10 数据手册

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T y p e : EC21QS10

OUTLINE DRAWING

FEATURES

* Miniature Size,Surface Mount Device

* Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Capability

* 30 Volts through 100Volts Types Available

* Packaged in 12mm Tape and Reel

* Not Rolling During Assembly

Maximum Ratings

Approx Net Weight:0.06g

Rating

Symbol

V_RRM

EC21QS10

100

Unit

Repetitive Peak Reverse Voltage

1.3 Ta=25 °C *1

2.0 Tl=106 °C

50Hz Half Sine

Wave Resistive Load

Average Rectified Output Current

RMS Forward Current

I_o

I_F(RMS)

I_FSM

3.14

50Hz Half Sine Wave,1cycle

Non-repetitive

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

T_jw

T_stg

-40 to +150

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max.

Unit

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 2.0A

Alumina Substrate Mounted *1

Rth_(j-l)-

0.85

108

Thermal Junction to Ambient Rth_(j-a)

Resistance

°C /W

Junction to Lead

*1 Alumina Substrate Mounted (Soldering Lands=2x2mm,Both Sides)

(Tl: Lead Temperature)

12 3 4 5 6

中文翻译

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