Datasheet > EBE11FD8AHFE-6E-E

EBE11FD8AHFE-6E-E

更新时间： 2024-01-04 04:18:14

品牌	Logo	应用领域
尔必达 - ELPIDA		/
页数	文件大小	规格书
22页	190K
描述
1GB Fully Buffered DIMM

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EBE11FD8AHFE-6E-E 数据手册

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EBE11FD8AHFT, EBE11FD8AHFE, EBE11FD8AHFL

Ordering Information

DIMM speed

grade

Component JEDEC

speed bin (CL-tRCD-tRP)

Part number

Mounted devices*¹

Mounted AMB*²

IDT Rev. C1

EBE11FD8AHFT-6E-E

PC2-5300F

DDR2-667 (5-5-5)

DDR2-533 (4-4-4)

DDR2-667 (5-5-5)

DDR2-533 (4-4-4)

DDR2-667 (5-5-5)

DDR2-533 (4-4-4)

EDE5108AHSE-6E-E

EDE5108AHSE-5C-E

EBE11FD8AHFT-5C-E

EBE11FD8AHFE-6E-E

EBE11FD8AHFE-5C-E

EBE11FD8AHFL-6E-E

EBE11FD8AHFL-5C-E

PC2-4200F

PC2-5300F

PC2-4200F

PC2-5300F

PC2-4200F

EDE5108AHSE-6E-E

NECEL Rev. B5+

INTEL Rev. D1

EDE5108AHSE-6E-E

EDE5108AHSE-5C-E

EDE5108AHSE-6E-E

EDE5108AHSE-5C-E

Notes: 1. Please refer to the EDE5108AHSE, EDE5116AHSE datasheet (E0908E) for detailed operation part and

timing waveforms.

2. Please refer to the following documents for detailed operation part and timing waveforms.

Advanced Memory Buffer (AMB) specification

FB-DIMM Architecture and Protocol specification

Part Number

E B E 11 F D 8 A H F T - 6E - E

Environment code

Elpida Memory

Type

E: Lead Free

(RoHS compliant)

B: Module

DRAM Speed Grade

Product Family

E: DDR2

6E: DDR2-667 (5-5-5)

5C: DDR2-533 (4-4-4)

Density / Rank

11: 1GB/2-rank

AMB Device Information

T: IDT, Rev.C1

E: NECEL, Rev.B5+

L: Intel, Rev.D1

Module Type

F: Fully Buffered

Module Outline

Mono Density

D: 512Mbit

F: 240-pin DIMM

Die Rev. (Mono)

Mono Organization

8: x8

Power Supply, Interface

A: 1.8V, SSTL_1.8

Preliminary Data Sheet E1000E30 (Ver. 3.0)

123 4 5 6 7...22

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EBE11FD8AHFL-6E-E	ELPIDA	1GB Fully Buffered DIMM	获取价格
EBE11FD8AHFT	ELPIDA	1GB Fully Buffered DIMM	获取价格
EBE11FD8AHFT-5C-E	ELPIDA	1GB Fully Buffered DIMM	获取价格
EBE11FD8AHFT-6E-E	ELPIDA	1GB Fully Buffered DIMM	获取价格