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DTC124XM3T5G

更新时间： 2024-02-06 23:08:17
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
10页 82K
描述
Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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中文翻译

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DTC124XM3T5G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：LEAD FREE, CASE 631AA-01, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.34其他特性：BUILT-IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F3JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DTC124XM3T5G 数据手册

 浏览型号DTC124XM3T5G的Datasheet PDF文件第2页浏览型号DTC124XM3T5G的Datasheet PDF文件第3页浏览型号DTC124XM3T5G的Datasheet PDF文件第4页浏览型号DTC124XM3T5G的Datasheet PDF文件第5页浏览型号DTC124XM3T5G的Datasheet PDF文件第6页浏览型号DTC124XM3T5G的Datasheet PDF文件第7页 
DTC114EM3T5G Series  
Digital Transistors (BRT)  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The digital transistor  
contains a single transistor with a monolithic bias network consisting  
of two resistors; a series base resistor and a base−emitter resistor. The  
digital transistor eliminates these individual components by  
integrating them into a single device. The use of a digital transistor can  
reduce both system cost and board space. The device is housed in the  
SOT−723 package which is designed for low power surface mount  
applications.  
http://onsemi.com  
NPN SILICON DIGITAL  
TRANSISTORS  
PIN 3  
COLLECTOR  
(OUTPUT)  
Features  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
PIN 2  
EMITTER  
(GROUND)  
• The SOT−723 Package can be Soldered using Wave or Reflow.  
• Available in 4 mm, 8000 Unit Tape & Reel  
• These are Pb−Free Devices  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
3
SOT−723  
CASE 631AA  
STYLE 1  
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
CEO  
2
1
50  
Vdc  
I
100  
mAdc  
C
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MARKING DIAGRAM  
xx  
xx = Specific Device Code  
(See Marking Table on page 2)  
M = Date Code  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 3  
DTC114EM3/D  
1234567...10

中文翻译

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DTC124XM3T5G 替代型号

型号 品牌 替代类型 描述 数据表
DTC124EM3T5G ONSEMI

类似代替

 Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resis
DTC124EXV3T1 ONSEMI

类似代替

 Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resis
DTC124EKAT146 ROHM

功能相似

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 		本产品是电阻内置型晶体管。由于内置了偏压用电阻，因此输入侧无需外接电阻即可构成逆变电路。

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