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DTC114YET1 PDF预览

DTC114YET1

更新时间: 2024-01-15 10:42:25
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
12页 191K
描述
NPN SILICON BIAS RESISTOR TRANSISTORS

DTC114YET1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SC-75
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.03Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.21最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signals
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC114YET1 数据手册

 浏览型号DTC114YET1的Datasheet PDF文件第1页浏览型号DTC114YET1的Datasheet PDF文件第2页浏览型号DTC114YET1的Datasheet PDF文件第4页浏览型号DTC114YET1的Datasheet PDF文件第5页浏览型号DTC114YET1的Datasheet PDF文件第6页浏览型号DTC114YET1的Datasheet PDF文件第7页 
DTC114EET1 SERIES  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k)  
V
OH  
4.9  
Vdc  
CC  
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 k)  
DTC143TET1  
CC  
B
L
DTC143ZET1  
Input Resistor  
DTC114EET1  
DTC124EET1  
DTC144EET1  
DTC114YET1  
DTC143TET1  
DTC123EET1  
DTC143EET1  
DTC143ZET1  
DTC124XET1  
DTC123JET1  
R1  
7.0  
15.4  
32.9  
7.0  
3.3  
1.5  
3.3  
3.3  
15.4  
1.54  
10  
22  
47  
13  
28.6  
61.1  
13  
6.1  
2.9  
6.1  
6.1  
28.6  
2.86  
kΩ  
10  
4.7  
2.2  
4.7  
4.7  
22  
2.2  
Resistor Ratio  
DTC114EET1/DTC124EET1/DTC144EET1  
DTC114YET1  
DTC143TET1  
R /R  
0.8  
0.17  
1.0  
0.21  
1.2  
0.25  
1
2
DTC123EET1/DTC143EET1  
DTC143ZET1  
DTC124XET1  
0.8  
1.0  
0.1  
0.47  
0.047  
1.2  
0.055  
0.38  
0.038  
0.185  
0.56  
0.056  
DTC123JET1  
250  
200  
150  
100  
R
= 600°C/W  
50  
0
θ
JA  
50  
0
50  
100  
150  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 1. Derating Curve  
1.0  
D = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
0.01  
SINGLE PULSE  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t, TIME (s)  
1.0  
10  
100  
1000  
Figure 2. Normalized Thermal Response  
http://onsemi.com  
3

DTC114YET1 替代型号

型号 品牌 替代类型 描述 数据表
DTC114Y ONSEMI

类似代替

NPN SILICON BIAS RESISTOR TRANSISTOR
DTC114YET1G ONSEMI

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Bias Resistor Transistor
SDTC114YET1G ONSEMI

功能相似

Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

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