Datasheet > DTC114-WE

DTC114-WE

更新时间： 2024-09-24 12:56:07

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
2页	201K
描述
NPN Small Signal Transistor

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数据手册

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DTC114-WE 数据手册

DTC114 WM/WE/WUA/WCA/WSA

NPN Small Signal Transistor

Small Signal Diode

Features

Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistor

(see equivalent circuit).

The bias resistors consist of thin -film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

Only the on/off conditions need to be set for

operation,marking device design easy.

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code.

Ordering Information

Part No.

DTC114 WM

DTC114 WE

DTC114 EUA

DTC114 ECA

DTC114 ESA

Package

SOT-723

SOT-523

SOT-323

SOT-23

Packing

8K / 7" Reel

3K / 7" Reel

Marking

TO-92S

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Value

EUA ECA

200

Type Number

Power Dissipation

Symbol

Units

ESA

300

150

V_CC

V_IN

100

Supply Voltage

Input Voltage

-10～30

I_O

Output Current

I_C(MAX)

100

TJ, T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Notes:1. Valid provided that electrodes are kept at ambient temperature

Parameter

Symbol Min Typ

Max

Condtion

V_O=0.3V,I_O=2 mA

_CC=5V,I_O=100µA

Unit

V_I(on)

Input Voltage

V_I(off)

0.8

I_O/I_I=10mA/05mA

V_I=5V

Output Voltage

V_O(on)

0.1

0.3

Input Current

I_I

0.88

V_CC=50V,V_I=0

Output Current

I_O（off)

0.5

μA

V_O=5V,I_O=10mA

DC Current Gain

Input Resistance

G_I

R₁

KΩ

Resistance Ratio

R₂/R₁

f_T

0.37 0.47 0.57

250

V_O=10V,I_O=5mA,f=100MHz

Transition Frequency

MHz

Version:A12

中文翻译

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